FDS6676AS Fairchild Semiconductor, FDS6676AS Datasheet

MOSFET N-CH 30V 14.5A 8-SOIC

FDS6676AS

Manufacturer Part Number
FDS6676AS
Description
MOSFET N-CH 30V 14.5A 8-SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDS6676AS

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 14.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
14.5A
Vgs(th) (max) @ Id
3V @ 1mA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
2510pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.006 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
66 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
14.5 A
Power Dissipation
2500 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS6676AS
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS6676AS
Quantity:
2 500
Company:
Part Number:
FDS6676AS
Quantity:
2 500
Part Number:
FDS6676AS-NL
Manufacturer:
FAIRCHILD
Quantity:
50 000
Part Number:
FDS6676AS-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
FDS6676AS
30V N-Channel PowerTrench
General Description
The FDS6676AS is designed to replace a single SO-8
MOSFET and Schottky diode in synchronous DC:DC
power supplies.
maximize power conversion efficiency, providing a low
R
includes an integrated Schottky diode using Fairchild’s
monolithic SyncFET technology.
Applications
• DC/DC converter
• Low side notebook
©2008 Fairchild Semiconductor Corporation
D
J
DSS
GSS
D
θJA
θJC
DS(ON)
, T
Device Marking
STG
FDS6676AS
and low gate charge.
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
This 30V MOSFET is designed to
D
SO-8
D
D
– Continuous
– Pulsed
FDS6676AS
Device
S
Parameter
The FDS6676AS
S
S
G
®
T
A
SyncFET
=25
o
C unless otherwise noted
Reel Size
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
13’’
Features
• 14.5 A, 30 V.
• Includes SyncFET Schottky body diode
• Low gate charge (45nC typical)
• High performance trench technology for extremely low
• High power and current handling capability
R
RoHS Compliant
DS(ON)
and fast switching
5
6
7
8
Tape width
R
R
DS(ON)
–55 to +150
12mm
DS(ON)
Ratings
14.5
±20
2.5
1.2
30
50
50
25
1
max= 6.0 mΩ @ V
max= 7.25 mΩ @ V
4
3
2
1
May 2008
FDS6676AS Rev B2
2500 units
Quantity
GS
GS
= 10 V
Units
= 4.5 V
°C/W
°C
W
V
V
A
tm

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FDS6676AS Summary of contents

Page 1

... FDS6676AS 30V N-Channel PowerTrench General Description The FDS6676AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R and low gate charge. The FDS6676AS DS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology ...

Page 2

... Referenced to 25° ± mA, Referenced to 25° =14.5A, T =125° 14 1.0 MHz mV 1.0 MHz Ω GEN Ω 4 GEN 14 Typ Max Units V 20 mV/°C µA 500 ±100 nA 1 –4 mV/°C 4.5 6.0 mΩ 5.9 7.25 6.7 8 2510 pF 710 pF 270 pF Ω 1.6 2 FDS6676AS Rev B2 ...

Page 3

... T = 25°C unless otherwise noted A Test Conditions 3.5 A (Note (Note 14.5A 300 A/µs (Note determined by the user's board design. θCA b) 105°/W when 2 mounted on a .04 in pad copper Min Typ Max Units 0.4 0 FDS6676AS Rev B2 ...

Page 4

... Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 125 - 0.01 0.001 3 3.5 0 Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 4.0V 4.5V 6.0V 10V DRAIN CURRENT ( 7 125 GATE TO SOURCE VOLTAGE ( -55 C 0.2 0.4 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS6676AS Rev 0.8 ...

Page 5

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C/W θ 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( θJC θ 125 °C/W θJC P( (t) θ Duty Cycle 100 1000 FDS6676AS Rev B2 ...

Page 6

... Fairchild’s SyncFET process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDS6676AS. 10nS/DIV Figure 12. FDS6676AS SyncFET body diode reverse recovery characteristic. ...

Page 7

... Duty Cycle ≤ 0.1% Figure 19. Switching Time Test Circuit L + DUT 0.01Ω Figure 16. Unclamped Inductive + 10V DUT V GS Figure 18. Gate Charge Waveform DUT 10% 0V Figure 20. Switching Time Waveforms BV DSS Waveforms Q G(TOT Charge, (nC OFF t t d(ON) d(OFF 90% 90% 10% 10% 90% 50% 50% Pulse Width FDS6676AS Rev B2 ...

Page 8

... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDS6676AS Rev.B2 ® Rev. I34 ...

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