FQPF15P12 Fairchild Semiconductor, FQPF15P12 Datasheet - Page 5

• Manufacturer Part Number: FQPF15P12
• Description: MOSFET P-CH 120V 15A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF15P12

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 200 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 120V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 38nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 41W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.2 Ohms
• Forward Transconductance Gfs (max / Min): 9.5 S
• Drain-source Breakdown Voltage: - 120 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 41 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 11-2. Transient Thermal Response Curve for FQPF15P12
1 0
1 0
1 0
1 0
1 0
1 0
Figure 11-1. Transient Thermal Response Curve for FQP15P12
- 1
- 2
-1
-2
0
1 0
0
1 0
-5
- 5
D = 0 .5
D = 0 .5
0 .0 2
0 .0 1
0 .2
0 .0 5
0 .0 2
0 .0 1
0 .2
0 .1
0 .0 5
0 .1
(Continued)
s in g le p u ls e
1 0
1 0
s in g le p u ls e
-4
- 4
t
t
1
1
, S q u a r e W a v e P u ls e D u r a tio n [s e c ]
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
1 0
1 0
-3
- 3
1 0
1 0
-2
- 2
1 0
1 0
P
P
※ N o te s :
※ N o te s :
DM
DM
-1
- 1
1 . Z
2 . D u ty F a c to r, D = t
3 . T
1 . Z
2 . D u ty F a c to r , D = t
3 . T
θ J C
JM
θ J C
J M
(t) = 3 .6 6 ℃ /W M a x.
- T
( t) = 1 .5 ℃ /W M a x .
- T
t
t
1
C
1
C
t
t
2
= P
2
= P
1 0
1 0
D M
D M
0
0
* Z
* Z
1
θ J C
1
/t
/t
θ J C
2
2
(t)
( t)
1 0
1 0
1
1
Rev. A, December 2003