FDD3860 Fairchild Semiconductor, FDD3860 Datasheet - Page 4

• Manufacturer Part Number: FDD3860
• Description: MOSFET N-CH 100V 6.2A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD3860

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 5.9A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.2A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 31nC @ 10V
• Input Capacitance (ciss) @ Vds: 1740pF @ 50V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.036 Ohms
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6.2 A
• Power Dissipation: 3.1 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD3860TR

©2008 Fairchild Semiconductor Corporation
FDD3860 Rev.C1
Typical Characteristics
100
Figure 7.
0.1
10
10
10
1
8
6
4
2
1
8
6
4
2
0
0.01
0.1
0
Figure 9.
THIS AREA IS
LIMITED BY r
Figure 11. Forward Bias Safe
I
D
= 5.9A
Switching Capability
Gate Charge Characteristics
V
5
DS
Operating Area
T
Unclamped Inductive
0.1
t
AV
, DRAIN to SOURCE VOLTAGE (V)
J
ds(on)
= 125
, TIME IN AVALANCHE (ms)
1
Q
g
, GATE CHARGE (nC)
V
o
DD
C
SINGLE PULSE
T
R
T
10
J
C
θ
= 50V
JC
= MAX RATED
= 25
= 1.8
1
o
V
T
C
DD
o
10
J
C/W
= 25V
15
= 25°C unless otherwise noted
T
J
= 25
10
o
C
20
V
DD
100
= 75V
100us
10ms
1ms
DC
300
100
25
4
Figure 12.
3000
1000
100
Figure 10.
35
28
21
14
10
10
10
10
10
10
7
0
10
0.1
25
5
4
3
2
-6
Figure 8.
Single Pulse Maximum Power Dissipation
Current vs Case Temperature
f = 1MHz
V
R
GS
θ
JC
= 0V
10
V
= 1.8
V
GS
50
-5
DS
Maximum Continuous Drain
to Source Voltage
= 10V
, DRAIN TO SOURCE VOLTAGE (V)
T
o
Capacitance vs Drain
C
t, PULSE WIDTH (sec)
C/W
,
CASE TEMPERATURE (
10
1
-4
75
10
V
GS
-3
= 10V
100
SINGLE PULSE
R
10
10
θ
C
JC
C
-2
C
iss
oss
rss
o
= 1.8
C )
125
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10
o
C/W
-1
100
150
1