FDD5353 Fairchild Semiconductor, FDD5353 Datasheet - Page 5

• Manufacturer Part Number: FDD5353
• Description: MOSFET N-CH 60V 11.5A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD5353

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12.3 mOhm @ 10.7A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 11.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 3215pF @ 30V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0123 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 11.5 A
• Power Dissipation: 3100 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD5353TR

©2008 Fairchild Semiconductor Corporation
FDD5353 Rev.C
Typical Characteristics
0.0001
0.001
0.001
5E-4
0.01
0.01
0.1
0.1
2
1
1
2
10
10
-6
-4
D = 0.5
DUTY CYCLE-DESCENDING ORDER
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.1
0.05
0.02
0.01
10
-3
10
-5
SINGLE PULSE
R
θ
JC
T
Figure 13. Transient Thermal Response Curve
Figure 14.
SINGLE PULSE
R
(
J
= 1.8
Note 1b
θ
= 25°C unless otherwise noted
JA
= 96
o
C/W
10
)
o
C/W
-2
10
Transient Thermal Response Curve
-4
t, RECTANGULAR PULSE DURATION (sec)
t, RECTANGULAR PULSE DURATION (sec)
10
-1
5
10
-3
1
10
NOTES:
DUTY FACTOR: D = t
PEAK T
NOTES:
DUTY FACTOR: D = t
PEAK T
-2
10
J
J
= P
= P
DM
DM
x Z
x Z
P
θJc
P
θJA
DM
DM
1
1
/t
x R
/t
x R
2
10
2
θJc
-1
θJA
100
t
1
t
+ T
1
+ T
t
t
2
C
2
A
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1000
1