FDD6685 Fairchild Semiconductor, FDD6685 Datasheet - Page 2

• Manufacturer Part Number: FDD6685
• Description: MOSFET P-CH 30V 11A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDD6685

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 5V
• Input Capacitance (ciss) @ Vds: 1715pF @ 15V
• Power - Max: 1.6W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.02 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 11 A
• Power Dissipation: 52000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Fall Time: 21 ns
• Rise Time: 11 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDD6685; FDD6685TR

Package Marking and Ordering Information
Electrical Characteristics
Symbol
Drain-Source Avalanche Ratings
E
I
Off Characteristics
BV
I
I
On Characteristics
V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
V
Trr
Qrr
AS
DSS
GSS
D(on)
R
d(on)
r
d(off)
f
FS
BV
V
AS
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
G
GS(th)
DSS
T
T
Device Marking
DSS
J
J
FDD6685
Single Pulse Drain-Source
Avalanche Energy
Maximum Drain-Source
Avalanche Current
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Parameter
(Note 2)
FDD6685
Device
(Note 2)
(Note 4)
I
V
I
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
IF = –11 A,
diF/dt = 100 A/µs
T
D
D
D
A
GS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= –11 A
= –250 A, Referenced to 25 C
= –250 A, Referenced to 25 C
= 25°C unless otherwise noted
Reel Size
= 0 V, I
= –24 V,
= ±25V,
= V
= –10 V,
= –4.5 V,
= –10 V,I
= –10 V,
= –5 V,
= –15 V,
= 15 mV,
= –15 V,
= –10 V,
= –15V,
= –5 V
= 0 V,
Test Conditions
13”
GS
, I
D
D
= –250 A
I
= –250 A
D
S
= –11 A,T
= –3.2 A
V
V
I
I
V
I
V
I
GS
DS
D
D
D
f = 1.0 MHz
I
R
D
D
DS
GS
= –11 A
= –9 A
= –11 A
GEN
= –11 A,
= 0 V
= 0 V
= –1 A,
= –5 V
= 0 V,
= 6
J
=125 C
(Note 2)
Tape Width
12mm
–30
Min Typ Max
–20
–1
1715
–1.8
–0.8
–11
–24
440
225
3.6
42
14
21
20
26
17
11
43
21
17
26
13
5
9
4
2500 units
Quantity
±100
–1.2
–1
–3
20
30
31
21
68
34
24
FDD6685 Rev D (W)
Units
mV/ C
mV/ C
m
mJ
nA
pF
pF
pF
nC
nC
nC
nC
ns
ns
ns
ns
ns
A
V
V
A
S
V
A