FQP4N90C Fairchild Semiconductor, FQP4N90C Datasheet - Page 3

• Manufacturer Part Number: FQP4N90C
• Description: MOSFET N-CH 900V 4A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r
• Type: Power MOSFETr

Specifications of FQP4N90C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.2 Ohm @ 2A, 10V
• Drain To Source Voltage (vdss): 900V
• Current - Continuous Drain (id) @ 25° C: 4A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 22nC @ 10V
• Input Capacitance (ciss) @ Vds: 960pF @ 25V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4.2 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 5 S
• Drain-source Breakdown Voltage: 900 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 4 A
• Power Dissipation: 140000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 4.2Ohm
• Drain-source On-volt: 900V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220
• Dc: 1040
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2003 Fairchild Semiconductor Corporation
Typical Characteristics
1200
1000
10
10
10
10
800
600
400
200
10
8
6
4
2
-1
-2
0
1
0
10
10
0
-1
-1
Figure 5. Capacitance Characteristics
Top :
Bottom : 5.5 V
Figure 3. On-Resistance Variation vs
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
V
GS
2
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
D
10
10
, Drain Current [A]
0
0
V
GS
C
C
C
rss
= 10V
iss
oss
4
C
C
C
iss
oss
rss
= C
= C
= C
V
GS
10
10
gs
gd
ds
※ Note : T
6
※ Notes :
+ C
1
= 20V
+ C
1
1. 250μ s Pulse Test
2. T
※ Notes ;
gd
gd
1. V
2. f = 1 MHz
C
(C
= 25℃
ds
GS
J
= shorted)
= 25℃
= 0 V
8
10
10
10
10
10
10
12
10
-1
8
6
4
2
0
1
0
-1
1
0
2
0.2
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
Figure 2. Transfer Characteristics
Variation with Source Current
0.4
25
o
150℃
C
150
4
5
V
V
Q
o
and Temperature
SD
C
GS
G
0.6
, Source-Drain voltage [V]
, Total Gate Charge [nC]
, Gate-Source Voltage [V]
V
DS
V
V
25℃
DS
DS
= 720V
= 450V
= 180V
0.8
10
6
-55
※ Notes :
o
1. V
2. 250μ s Pulse Test
C
1.0
GS
※ Note : I
= 0V
※ Notes :
15
8
1. V
2. 250μ s Pulse Test
D
= 4A
DS
1.2
= 50V
Rev. A, June 2003
10
1.4
20