FQP17P10 Fairchild Semiconductor, FQP17P10 Datasheet - Page 4

• Manufacturer Part Number: FQP17P10
• Description: MOSFET P-CH 100V 16.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP17P10

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 8.25A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 16.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 10V
• Input Capacitance (ciss) @ Vds: 1100pF @ 25V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.19 Ohms
• Forward Transconductance Gfs (max / Min): 9.9 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 16.5 A
• Power Dissipation: 100 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 16.5A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 190mohm
• Rds(on) Test Voltage Vgs: -10V
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Fall Time: 100 ns
• Rise Time: 200 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
Figure 9. Maximum Safe Operating Area
-100
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
T
-V
vs. Temperature
J
, Junction Temperature [
DS
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
1 0
1 0
※ Notes :
1 0
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 175
= 25
10
- 5
1
0 .0 5
0 .0 2
D = 0 . 5
o
0 .0 1
0 .1
C
0 .2
DS(on)
o
50
C
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
1 ms
o
- 4
C]
s in g le p u ls e
※ Notes :
1. V
2. I
t
1
100 s
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
D
GS
= -250 μ A
150
= 0 V
10
2
1 0
- 3
200
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
20
16
12
8
4
0
-100
25
※ N o te s :
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
1 0
1 . Z
2 . D u ty F a c t o r , D = t
3 . T
- 1
P
θ J C
J M
-50
DM
50
- T
( t ) = 1 . 5 ℃ /W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
C
D M
75
t
0
, Case Temperature [ ℃ ]
1 0
2
* Z
0
1
/t
θ J C
2
( t )
100
50
1 0
1
125
100
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= -8.25 A
= -10 V
Rev. B, August 2002
200
175