FQD18N20V2TM Fairchild Semiconductor, FQD18N20V2TM Datasheet - Page 3

• Manufacturer Part Number: FQD18N20V2TM
• Description: MOSFET N-CH 200V 15A DPAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r
• Type: Power MOSFETr

Specifications of FQD18N20V2TM

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 140 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 10V
• Input Capacitance (ciss) @ Vds: 1080pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.14 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.14Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±30V
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: DPAK
• Fall Time: 62 ns
• Rise Time: 133 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2009 Fairchild Semiconductor Corporation
Typical Characteristics
10
10
10
2500
2000
1500
1000
0.5
0.4
0.3
0.2
0.1
0.0
500
-1
1
0
10
0
10
0
-1
Top :
Bottom :
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
-1
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
15.0 V
10.0 V
5.5 V
8.0 V
7.0 V
6.5 V
6.0 V
10
V
GS
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
20
I
D
10
, Drain Current [A]
10
0
0
C
rss
30
V
C
V
GS
oss
GS
= 20V
= 10V
C
C
C
C
iss
40
iss
oss
rss
= C
= C
= C
※ Notes :
1. 250 μ s Pulse Test
2. T
10
gs
gd
ds
10
※ Note : T
+ C
1
+ C
C
1
= 25 ℃
gd
gd
(C
50
※ Notes :
ds
1. V
2. f = 1 MHz
= shorted)
J
= 25 ℃
GS
= 0 V
60
10
10
10
10
10
10
12
10
8
6
4
2
0
-1
-1
1
0
1
0
0
0.2
4
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
0.4
150℃
Variation vs. Source Current
5
5
25 ℃
150 ℃
0.6
V
V
Q
and Temperature
GS
SD
25℃
G
6
, Total Gate Charge [nC]
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
V
10
DS
V
0.8
= 160V
DS
V
= 100V
DS
7
= 40V
-55 ℃
1.0
15
8
1.2
※ Notes :
※ Note : I
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
20
DS
GS
= 40V
9
= 0V
D
1.4
= 18A
Rev. B2, January 2009
25
10
1.6