FQPF22P10 Fairchild Semiconductor, FQPF22P10 Datasheet - Page 4

• Manufacturer Part Number: FQPF22P10
• Description: MOSFET P-CH 100V 13.2A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF22P10

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 6.6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 13.2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.125 Ohms
• Forward Transconductance Gfs (max / Min): 11 S
• Drain-source Breakdown Voltage: - 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 13.2 A
• Power Dissipation: 45 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
-1
Figure 9. Maximum Safe Operating Area
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
Operation in This Area
is Limited by R
DS
, Junction Temperature [
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
C
J
0
= 150
= 25
10
DC
- 5
1
DS(on)
o
D = 0 .5
0 .0 2
0 .0 1
C
o
0 .0 5
50
C
0 .2
0 .1
100 ms
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
C]
- 4
s i n g l e p u ls e
1 ms
※ Notes :
1. V
2. I
t
1
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
G S
= -250 μ A
= 0 V
150
100 us
10
2
1 0
- 3
200
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
-100
15
12
9
6
3
0
25
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
※ N o te s :
- 1
1 . Z
2 . D u ty F a c to r , D = t
3 . T
P
-50
DM
50
θ J C
J M
- T
vs. Case Temperature
( t) = 3 .3 ℃ /W M a x .
C
T
vs. Temperature
J
= P
T
t
, Junction Temperature [
1
C
0
75
t
1 0
, Case Temperature [ ℃ ]
2
D M
0
* Z
1
θ J C
/t
2
100
50
( t)
1 0
1
100
125
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= -11 A
= -10 V
Rev. B, August 2002
175
200