FDS3590 Fairchild Semiconductor, FDS3590 Datasheet
FDS3590
Manufacturer Part Number
FDS3590
Description
MOSFET N-CH 80V 6.5A 8SOIC
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet
1.FDS3590.pdf
(6 pages)
Specifications of FDS3590
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
39 mOhm @ 6.5A, 10V
Drain To Source Voltage (vdss)
80V
Current - Continuous Drain (id) @ 25° C
6.5A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
35nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 40V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.032 Ohms
Forward Transconductance Gfs (max / Min)
25 S
Drain-source Breakdown Voltage
80 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
6.5 A
Power Dissipation
2.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDS3590
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
FDS3590-NL
Manufacturer:
FAIRCHILD
Quantity:
5 000
Part Number:
FDS3590-NL
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDS3590
80V N-Channel PowerTrench® MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
2000 Fairchild Semiconductor Corporation
DS(ON)
J
DSS
GSS
D
, T
JA
JC
Device Marking
STG
N-Channel
specifications.
FDS3590
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Power Dissipation for Single Operation
Operating and Storage Junction Temperature
Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
D
MOSFET
SO-8
D
D
– Continuous
– Pulsed
S
has
FDS3590
Parameter
Device
S
S
been
G
designed
T
A
=25
o
C unless otherwise noted
Reel Size
13’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1c)
(Note 1)
Features
6.5 A, 80 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
High power and current handling capability
low R
DS(ON)
5
6
8
7
Tape width
R
R
12mm
-55 to +150
Ratings
DS(ON)
DS(ON)
6.5
2.5
1.2
1.0
80
50
50
25
20
= 39 m @ V
= 44 m @ V
November 2000
4
3
2
1
GS
GS
= 10 V
= 6 V
FDS3590 Rev C (W)
2500 units
Quantity
Units
C/W
C/W
W
V
V
A
C
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Datasheet:
FDS3590 Summary of contents
Page 1
... High power and current handling capability =25 C unless otherwise noted A (Note 1a) (Note 1a) (Note 1b) (Note 1c) (Note 1a) (Note 1) Reel Size 13’’ November 2000 DS(ON DS(ON Ratings Units 6 2.5 W 1.2 1.0 -55 to +150 C 50 C/W 25 C/W Tape width Quantity 12mm 2500 units FDS3590 Rev C (W) ...
Page 2
... GS GEN 6 2.1 A (Note determined by the user's board design 105 °C/W when mounted pad copper Min Typ Max Units 175 100 nA –100 –6 mV 1180 pF 171 4.5 nC 5.8 nC 2.1 A 0.74 1 125 °C/W when mounted on a minimum pad. FDS3590 Rev C. (W) ...
Page 3
... Scale letter size paper 2. Pulse Test: Pulse Width < 300 s, Duty Cycle < 2.0% FDS3590 Rev C. (W) ...
Page 4
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4.0V GS 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 3 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDS3590 Rev C. ( 1.4 ...
Page 5
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz ISS C OSS DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 125°C 25° 100 t, SINGLE PULSE TIME (sec) Power Dissipation. R ( 125 °C/W JA P(pk ( Duty Cycle 100 1000 FDS3590 Rev C. (W) ...
Page 6
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FASTr™ Bottomless™ GlobalOptoisolator™ CoolFET™ GTO™ CROSSVOLT™ HiSeC™ DOME™ ISOPLANAR™ ...