FDD6680AS Fairchild Semiconductor, FDD6680AS Datasheet

FDD6680AS

Manufacturer Part Number

FDD6680AS

Description

MOSFET N-CH 30V 55A DPAK

Manufacturer

Fairchild Semiconductor

Series

PowerTrench®r

Datasheet

1.FDD6680AS.pdf (8 pages)

Specifications of FDD6680AS

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

10.5 mOhm @ 12.5A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

55A

Vgs(th) (max) @ Id

3V @ 1mA

Gate Charge (qg) @ Vgs

29nC @ 15V

Input Capacitance (ciss) @ Vds

1200pF @ 15V

Power - Max

1.3W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0105 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

44 S

Drain-source Breakdown Voltage

30 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

55 A

Power Dissipation

60000 mW

Maximum Operating Temperature

+ 150 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Continuous Drain Current Id

55A

Drain Source Voltage Vds

30V

On Resistance Rds(on)

10.5mohm

Rds(on) Test Voltage Vgs

10V

Threshold Voltage Vgs Typ

1.4V

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

FDD6680AS

Manufacturer:

FAIRCHILD

Quantity:

30 000

Current page: 1 of 8
Download datasheet (328Kb)

FDD6680AS

30V N-Channel PowerTrench

General Description

The FDD6680AS is designed to replace a single

MOSFET and Schottky diode in synchronous DC:DC

power supplies.

maximize power conversion efficiency, providing a low

includes an integrated Schottky diode using Fairchild’s

monolithic SyncFET technology.

the

synchronous rectifier is indistinguishable from the

performance of the FDD6680A in parallel with a

Schottky diode.

Applications

• DC/DC converter

• Low side notebook

DS(ON)

Absolute Maximum Ratings

Symbol

Thermal Characteristics

Package Marking and Ordering Information

Device Marking

DSS

GSS

θJC

θJA

, T

FDD6680AS

STG

and low gate charge.

Drain-Source Voltage

Gate-Source Voltage

Drain Current

Power Dissipation

Operating and Storage Junction Temperature Range

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient

This 30V MOSFET is designed to

the

FDD6680AS

low-side

– Continuous

– Pulsed

TO-252

Device

The performance of

The FDD6680AS

Parameter

switch

SyncFET

=25

C unless otherwise noted

Reel Size

(Note 1a)

(Note 1b)

(Note 1a)

(Note 1b)

(Note 3)

(Note 1)

13’’

™

Features

• 55 A, 30 V

• Includes SyncFET Schottky body diode

• Low gate charge (21nC typical)

• High performance trench technology for extremely

• High power and current handling capability

low R

DS(ON)

Tape width

–55 to +150

16mm

max= 10.5 mΩ @ V

Ratings

max= 13.0 mΩ @ V

±20

100

3.1

1.3

2.1

April 2008

2500 units

FDD6680AS Rev A1(X)

Quantity

= 10 V

= 4.5 V

Unit

°C/W

°C

Related parts for FDD6680AS

FDD6680AS Summary of contents

Page 1

... FDD6680AS 30V N-Channel PowerTrench General Description The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low R and low gate charge. The FDD6680AS DS(ON) includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology ...

Page 2

... R GS GEN Ω 4 GEN 12 4.4 A (Note (Note 12.5A 300 A/µs (Note Min Typ Max Units 54 205 mJ 13 mV/°C µA 500 ±100 –3 mV/°C 8.6 10.5 mΩ 10.3 13.0 12.5 16 1200 pF 350 pF 120 pF Ω 1 4.4 A 0.5 0 FDD6680AS Rev A1 (X) ...

Page 3

... T = 25°C and T = 25°C unless otherwise noted A is determined by the user's board design. θCA = 40°C/W when mounted on a θJA 2 1in pad copper D = 10V. Package current limitation is 21A and V DS(on) J(max 96°C/W when mounted θ minimum pad. FDD6680AS Rev A1 (X) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. 3.5V 4.0V 4.5V 5.0V 6.0V 10V DRAIN CURRENT ( 6. 125 = GATE TO SOURCE VOLTAGE ( Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD6680AS Rev A1 (X) 100 10 1 ...

Page 5

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss rss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C/W θ 25°C A 0.01 0 100 t , TIME (sec) 1 Power Dissipation. R ( θJA θ °C/W θJA P( (t) θ Duty Cycle 100 1000 FDD6680AS Rev A1 (X) 30 1000 ...

Page 6

... Schottky diode in parallel with a MOSFET. Figure 12 shows the reverse recovery characteristic of the FDD6680AS. 10nS/div Figure 12. FDD6680AS SyncFET body diode reverse recovery characteris For comparison purposes, Figure 13 shows the reverse recovery characteristics of the body diode of an equivalent size MOSFET produced without SyncFET (FDD6680) ...

Page 7

... Pulse Width ≤ 1µs Duty Cycle ≤ 0.1% Figure 16. Switching Time Test Circuit + Figure 13. Unclamped Inductive Waveforms + 10V DUT Charge, (nC) Figure 15. Gate Charge Waveform d(ON 90% + DUT 50% 10% 0V Figure 17. Switching Time Waveforms BV DSS G(TOT OFF t d(OFF 90% 10% 10% 90% 50% Pulse Width FDD6680AS Rev A1 (X) ...

Page 8

... Fairchild Semiconductor. The datasheet is for reference information only. The Power Franchise ® tm TinyBoost™ TinyBuck™ ® TinyLogic TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ µSerDes™ ® UHC Ultra FRFET™ UniFET™ VCX™ VisualMax™ ® Definition FDD6680AS Rev A1(X) ® Rev. I34 ...

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