FQPF9P25 Fairchild Semiconductor, FQPF9P25 Datasheet - Page 2
![MOSFET P-CH 250V 6A TO-220F](/photos/5/31/53149/mfg_to-220f_desc_sml.jpg)
FQPF9P25
Manufacturer Part Number
FQPF9P25
Description
MOSFET P-CH 250V 6A TO-220F
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQPF9P25.pdf
(8 pages)
Specifications of FQPF9P25
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
620 mOhm @ 3A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
6A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
38nC @ 10V
Input Capacitance (ciss) @ Vds
1180pF @ 25V
Power - Max
50W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.62 Ohms
Forward Transconductance Gfs (max / Min)
4.8 S
Drain-source Breakdown Voltage
- 250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
6 A
Power Dissipation
50 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQPF9P25
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQPF9P25
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
©2000 Fairchild Semiconductor International
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 28.9mH, I
3. I
4. Pulse Test : Pulse width
5. Essentially independent of operating temperature
Off Characteristics
BV
/
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
SD
FS
BV
GS(th)
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
DSS
DSS
-9.4A, di/dt
T
J
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
= -6.0A, V
300A/ s, V
300 s, Duty cycle
DD
= -50V, R
DD
Parameter
BV
DSS,
G
= 25
Starting T
2%
Starting T
J
= 25°C
T
C
J
= 25°C unless otherwise noted
= 25°C
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= -250 A, Referenced to 25°C
/ dt = 100 A/ s
= 25
= -250 V, V
= -200 V, T
= V
= -40 V, I
= -25 V, V
= -200 V, I
= 0 V, I
= -30 V, V
= 30 V, V
= -10 V, I
= -125 V, I
= -10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
, I
D
S
S
D
= -250 A
D
= -6.0 A
= -9.4 A,
D
DS
= -250 A
GS
DS
D
D
C
= -3.0 A
GS
= -3.0 A
= -9.4 A,
= -9.4 A,
= 0 V
= 125°C
= 0 V
= 0 V,
= 0 V
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
-250
Min
-3.0
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0.48
1.45
Typ
-0.2
910
170
150
190
4.8
7.6
27
20
45
65
29
14
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1180
Max
-100
0.62
100
-5.0
220
310
100
140
-6.0
-5.0
-10
-24
35
50
38
-1
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Rev. A2, December 2000
Units
V/°C
nC
nC
nC
nA
nA
pF
pF
pF
ns
ns
ns
ns
ns
V
V
S
A
A
V
A
A
C