IRL640A Fairchild Semiconductor, IRL640A Datasheet - Page 4

MOSFET N-CH 200V 18A TO-220

IRL640A

Manufacturer Part Number
IRL640A
Description
MOSFET N-CH 200V 18A TO-220
Manufacturer
Fairchild Semiconductor
Datasheet

Specifications of IRL640A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
180 mOhm @ 9A, 5V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
56nC @ 5V
Input Capacitance (ciss) @ Vds
1705pF @ 25V
Power - Max
110W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.18 Ohms
Forward Transconductance Gfs (max / Min)
13.3 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
18 A
Power Dissipation
110 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRL640A
Manufacturer:
IR
Quantity:
12 500
IRL640A
1 0
1 . 2
1 . 1
1 . 0
0 . 9
0 . 8
1 0
1 0
1 0
-1
2
1
0
- 7 5
1 0
0
Fig 7. Breakdown Voltage vs. Temperature
@ N o t e s :
1 . T
2 . T
3 . S i n g l e P u l s e
- 5 0
C
J
Fig 9. Max. Safe Operating Area
= 2 5
= 1 5 0
- 2 5
T
V
o
J
DS
C
o
C
O p e r a t i o n i n T h i s A r e a
i s L i m i t e d b y R
, Junction Temperature [
, Drain-Source Voltage [V]
0
10
10
10
- 1
- 2
1 0
0
10
1
2 5
- 5
0.01
0.05
0.02
D=0.5
0.2
0.1
DS(on)
5 0
D C
1 0 m s
7 5
10
t
1 m s
1
- 4
single pulse
1 0 0
, Square Wave Pulse Duration
@ N o t e s :
1 0 0 s
1 0
1 . V
2 . I
o
2
C]
1 2 5
GS
D
= 2 5 0 A
= 0 V
Fig 11. Thermal Response
10
1 5 0
- 3
1 7 5
10
- 2
@ Notes :
Fig 10. Max. Drain Current vs. Case Temperature
1. Z
2. Duty Factor, D=t
3. T
2 . 0
1 . 5
1 . 0
0 . 5
0 . 0
2 0
1 5
1 0
P
5
0
- 7 5
DM
2 5
J M
J C
10
-T
Fig 8. On-Resistance vs. Temperature
(t)=1.14
- 1
C
- 5 0
=P
D M
t
1
*Z
- 2 5
t
5 0
[sec]
2
T
J
o
J C
T
C/W Max.
, Junction Temperature [
c
(t)
10
0
, Case Temperature [
1
0
/t
2
2 5
7 5
5 0
10
1 0 0
1
7 5
1 0 0
@ N o t e s :
o
C]
1 . V
2 . I
o
C]
GS
D
1 2 5
1 2 5
= 9 A
= 5 V
1 5 0
1 7 5
1 5 0
4

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