FDPF680N10T Fairchild Semiconductor, FDPF680N10T Datasheet - Page 3

• Manufacturer Part Number: FDPF680N10T
• Description: MOSFET N-CH 100V 12A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDPF680N10T

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 68 mOhm @ 6A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 17nC @ 10V
• Input Capacitance (ciss) @ Vds: 1000pF @ 50V
• Power - Max: 24W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 68 m Ohms
• Forward Transconductance Gfs (max / Min): 26 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 24 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDPF680N10T Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
5000
1000
0.20
0.15
0.10
0.05
100
0.1
60
10
10
1
0.01
0
0.01
0
V
GS
=
Drain Current and Gate Voltage
15.0 V
10.0 V
10
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
V
C
DS
C
C
DS
oss
rss
iss
, Drain-Source Voltage [V]
0.1
,Drain-Source Voltage[V]
I
D
0.1
20
, Drain Current [A]
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
V
30
GS
1
*Notes:
= 10V
1. 250
2. T
*Note:
1. V
2. f = 1MHz
*Note: T
40
C
1
= 25
μ
GS
V
s Pulse Test
GS
= 0V
o
C
= 20V
10
C
50
= 25
o
C
10
60
50
200
100
3
0.1
10
10
60
10
8
6
4
2
0
1
1
0.0
Figure 2. Transfer Characteristics
0
Figure 4. Body Diode Forward Voltage
4
Figure 6. Gate Charge Characteristics
V
SD
3
, Body Diode Forward Voltage [V]
150
V
Q
5
GS
g
Variation vs. Source Current
o
and Temperature
, Total Gate Charge [nC]
V
V
V
C
,Gate-Source Voltage[V]
0.5
DS
DS
DS
25
= 25V
= 50V
= 80V
o
C
6
150
o
C
6
*Notes:
9
1. V
2. 250
-55
*Notes:
1. V
2. 250
25
*Note: I
1.0
o
o
DS
C
C
GS
μ
= 20V
μ
s Pulse Test
= 0V
s Pulse Test
7
D
12
= 12A
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1.5
15
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