FQB22P10TM Fairchild Semiconductor, FQB22P10TM Datasheet - Page 4

• Manufacturer Part Number: FQB22P10TM
• Description: MOSFET P-CH 100V 22A D2PAK
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQB22P10TM

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 125 mOhm @ 11A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 22A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 50nC @ 10V
• Input Capacitance (ciss) @ Vds: 1500pF @ 25V
• Power - Max: 3.75W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.125 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 13.5 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 22 A
• Power Dissipation: 3750 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 22A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 96mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: -4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FQB22P10TM

©2008 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
Figure 9. Maximum Safe Operating Area
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
-50
-V
T
vs. Temperature
J
, Junction Temperature [
DS
Operation in This Area
is Limited by R
0
, Drain-Source Voltage [V]
※ Notes :
1 0
1 0
1 0
1. T
2. T
3. Single Pulse
- 1
- 2
1 0
0
C
J
= 175
= 25
10
- 5
1
o
D = 0 .5
0 .0 2
0 .0 1
DS(on)
0 .0 5
C
50
o
0 .2
0 .1
C
DC
Figure 11. Transient Thermal Response Curve
10 ms
100
1 0
(Continued)
o
1 ms
C]
- 4
s i n g l e p u ls e
※ Notes :
1. V
2. I
t
1
100 s
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
G S
= -250 μ A
= 0 V
150
10
2
1 0
- 3
200
1 0
- 2
2.5
2.0
1.5
1.0
0.5
0.0
-100
25
20
15
10
5
0
25
※ N o te s :
Figure 8. On-Resistance Variation
1 0
Figure 10. Maximum Drain Current
1 . Z
2 . D u ty F a c to r , D = t
3 . T
- 1
P
-50
θ J C
J M
DM
50
- T
( t) = 1 .2 ℃ /W M a x .
vs. Case Temperature
C
= P
T
vs. Temperature
J
T
t
, Junction Temperature [
1
C
D M
0
75
t
1 0
, Case Temperature [ ℃ ]
2
* Z
0
1
/t
θ J C
2
( t)
100
50
1 0
1
100
125
o
C]
※ Notes :
1. V
2. I
150
150
D
GS
= -11 A
= -10 V
Rev. C1, Oct 2008
175
200