SFP9640L Fairchild Semiconductor, SFP9640L Datasheet - Page 2

• Manufacturer Part Number: SFP9640L
• Description: MOSFET P-CH 200V 11A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of SFP9640L

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 5.5A, 5V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 59nC @ 5V
• Input Capacitance (ciss) @ Vds: 1585pF @ 25V
• Power - Max: 98W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SFP9640L
ΔBV/ΔT
Symbol
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
Symbol
Notes ;
① Repetitive Rating : Pulse Width Limited by Maximum Junction Temperature
② L=3mH, I
③ I
④ Pulse Test : Pulse Width = 250μs, Duty Cycle ≤ 2%
⑤ Essentially Independent of Operating Temperature
R
BV
V
t
t
V
I
I
C
C
GS(th)
C
Q
Q
I
Q
DS(on)
d(on)
d(off)
GSS
DSS
g
Q
I
SM
t
t
t
SD
oss
S
rr
SD
DSS
iss
rss
fs
gd
r
f
gs
rr
g
≤-11A, di/dt≤100A/μs, V
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage , Forward
Gate-Source Leakage , Reverse
Drain-to-Source Leakage Current
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain(＂Miller＂) Charge
Continuous Source Current
Pulsed-Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
AS
=-11A, V
Characteristic
DD
Characteristic
=-50V, R
DD
≤BV
G
=27
DSS
Ω
(T
, Starting T
, Starting T
C
=25℃ unless otherwise specified)
④
①
J
J
-200
-1.0
=25℃
Min.
Min.
=25℃
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
-0.16
1220
Typ.
Typ.
5.47
22.9
1.45
205
207
9.2
81
16
23
54
19
46
--
--
--
--
--
--
--
--
--
--
1585
Max. Units
-100
-100
Max. Units
-2.0
100
310
120
115
-5.0
-10
0.5
-11
-44
40
55
50
59
--
--
--
--
--
--
--
V/℃
μA
μC
nA
nC
pF
ns
ns
Ω
V
V
S
A
V
V
I
V
V
V
V
V
V
V
V
V
R
V
I
See Fig 6 & Fig 12
Integral reverse pn-diode
in the MOSFET
T
T
di
D
D
J
J
GS
DS
GS
GS
DS
DS
GS
DS
GS
DD
DS
G
=-250μA
=-11A
F
=25℃,I
=25℃,I
=4.6Ω
/dt=100A/μs
=-5V,I
=-200V
=-160V,T
=-40V,I
=-160V,V
=0V,I
=-20V
=20V
=-5V,I
=0V,V
=-100V,I
See Fig 13
Test Condition
Test Condition
See Fig 5
POWER MOSFET
D
S
F
D
D
DS
=-250μA
=-11A
=-11A,V
N-CHANNEL
=-250μA
=-5.5A
D
=-5.5A
=-25V,f =1MHz
D
C
GS
=-11A,
See Fig 7
=125℃
=-5V,
GS
=0V
④ ⑤
④ ⑤
④
④
④