FQP32N20C Fairchild Semiconductor, FQP32N20C Datasheet - Page 4
![MOSFET N-CH 200V 28A TO-220](/photos/5/30/53099/261-to-220-3_sml.jpg)
FQP32N20C
Manufacturer Part Number
FQP32N20C
Description
MOSFET N-CH 200V 28A TO-220
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQP32N20C.pdf
(10 pages)
Specifications of FQP32N20C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
82 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
28A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
2200pF @ 25V
Power - Max
156W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.082 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
28 A
Power Dissipation
156000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQP32N20C
Manufacturer:
FSC
Quantity:
5 000
Company:
Part Number:
FQP32N20C
Manufacturer:
Fairchi/ON
Quantity:
89 000
Part Number:
FQP32N20C
Manufacturer:
FSC可看货
Quantity:
20 000
©2004 Fairchild Semiconductor Corporation
Typical Characteristics
1.2
1.1
1.0
0.9
0.8
-100
10
30
25
20
15
10
Figure 9-1. Maximum Safe Operating Area
10
10
10
5
0
25
-1
2
1
0
10
Figure 7. Breakdown Voltage Variation
0
Figure 10. Maximum Drain Current
※
1. T
2. T
3. Single Pulse
Notes :
-50
C
J
= 150
= 25
50
o
C
o
C
Operation in This Area
is Limited by R
vs Case Temperature
T
J
, Junction Temperature [
V
T
vs Temperature
DS
0
for FQP32N20C
C
, Case Temperature [ ]
, Drain-Source Voltage [V]
10
DS(on)
75
1
50
DC
100
10 ms
100
(Continued)
℃
o
1 ms
C]
※
100
1. V
2. I
10
Notes :
D
2
GS
125
= 250 µA
µ
150
= 0 V
s
200
150
10
10
10
10
-1
2
1
0
10
Figure 9-2. Maximum Safe Operating Area
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-100
※
1. T
2. T
3. Single Pulse
Notes :
Figure 8. On-Resistance Variation
C
J
= 150
= 25
-50
o
C
o
C
Operation in This Area
is Limited by R
V
DS
T
for FQPF32N20C
, Drain-Source Voltage [V]
J
, Junction Temperature [
vs Temperature
10
0
1
DS(on)
DC
50
10 ms
1 ms
100
100
o
C]
10
µ
10
s
2
µ
s
※
1. V
2. I
150
Notes :
D
GS
= 14 A
= 10 V
200
Rev. A, March 2004