FQB50N06LTM Fairchild Semiconductor, FQB50N06LTM Datasheet

MOSFET N-CH 60V 52.4A D2PAK

FQB50N06LTM

Manufacturer Part Number
FQB50N06LTM
Description
MOSFET N-CH 60V 52.4A D2PAK
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheets

Specifications of FQB50N06LTM

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
21 mOhm @ 26.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
52.4A
Vgs(th) (max) @ Id
2.5V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 5V
Input Capacitance (ciss) @ Vds
1630pF @ 25V
Power - Max
3.75W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.021 Ohms
Forward Transconductance Gfs (max / Min)
40 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
52.4 A
Power Dissipation
3.75 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2008 Fairchild Semiconductor Corporation
FQB50N06L / FQI50N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary,
planar stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the
avalanche and commutation mode. These devices are well
suited for low voltage applications such as automotive, DC/
DC converters, and high efficiency switching for power
management in portable and battery operated products.
Absolute Maximum Ratings
Thermal Characteristics
* When mounted on the minimum pad size recommended (PCB Mount)
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J
L
Symbol
DSS
GSS
AS
AR
D
Symbol
, T
JC
JA
JA
STG
G
S
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
Power Dissipation (T
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient
FQB Series
D
2
-PAK
D
- Continuous (T
- Continuous (T
- Pulsed
- Derate above 25°C
A
C
Parameter
Parameter
= 25°C) *
= 25°C)
G
D
T
S
C
C
C
= 25°C unless otherwise noted
= 25°C)
= 100°C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Features
• 52.4A, 60V, R
• Low gate charge ( typical 24.5 nC)
• Low Crss ( typical 90 pF)
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175 C maximum junction temperature rating
• RoHS Compliant
FQI Series
I
2
-PAK
FQB50N06L / FQI50N06L
DS(on)
Typ
--
--
--
-55 to +175
= 0.021
52.4
37.1
52.4
12.1
3.75
0.81
210
990
121
300
7.0
60
20
G
!
!
@V
Max
1.24
62.5
40
GS
! "
! "
= 10 V
!
!
!
!
S
D
"
"
"
"
"
"
October 2008
QFET
Units
W/°C
Units
°C/W
°C/W
°C/W
V/ns
mJ
mJ
Rev. A2. Oct 2008
°C
°C
W
W
V
A
A
A
V
A
®

Related parts for FQB50N06LTM

FQB50N06LTM Summary of contents

Page 1

... Thermal Resistance, Junction-to-Ambient * JA R Thermal Resistance, Junction-to-Ambient JA * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor Corporation Features • 52.4A, 60V, R • Low gate charge ( typical 24.5 nC) • Low Crss ( typical 90 pF) • Fast switching • 100% avalanche tested • ...

Page 2

... Repetitive Rating : Pulse width limited by maximum junction temperature 300 52.4A 25V ≤ 52.4A, di/dt ≤ 300A ≤ DSS, 4. Pulse Test : Pulse width ≤ 300 s, Duty cycle ≤ Essentially independent of operating temperature ©2008 Fairchild Semiconductor Corporation T = 25°C unless otherwise noted C Test Conditions 250 250 A, Referenced to 25° ...

Page 3

... I , Drain Current [A] D Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 4000 3000 C oss C iss 2000 C rss 1000 Drain-Source Voltage [V] DS Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor Corporation 175 ℃ 10V ※ Note : T = 25℃ J 125 150 175 200 0 10 ...

Page 4

... Notes : 175 Single Pulse Drain-Source Voltage [V] DS Figure 9. Maximum Safe Operating Area ©2008 Fairchild Semiconductor Corporation (Continued) 2.5 2.0 1.5 1.0 ※ Notes : 0.5 = 250 μ 0.0 100 150 200 -100 o C] Figure 8. On-Resistance Variation 60 50 100 Figure 10. Maximum Drain Current ※ ...

Page 5

... 3mA 3mA Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 10V 10V ©2008 Fairchild Semiconductor Corporation Gate Charge Test Circuit & Waveform Same Type Same Type as DUT as DUT DUT DUT 10% 10 DUT DUT ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms Driver ) ( Driver ) DUT ) ( DUT ) DUT ) ( DUT ) ©2008 Fairchild Semiconductor Corporation + + DUT DUT Driver Driver Same Type Same Type as DUT as DUT • dv/dt controlled by R • dv/dt controlled by R • I • I controlled by pulse period ...

Page 7

... Mechanical Dimensions ©2008 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A2. Oct 2008 ...

Page 8

... Mechanical Dimensions ©2002 Fairchild Semiconductor Corporation PAK Dimensions in Millimeters Rev. A2. Oct 2008 ...

Page 9

... TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended exhaustive list of all such trademarks. Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ ...

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