FQPF8N60CFT Fairchild Semiconductor, FQPF8N60CFT Datasheet - Page 4

• Manufacturer Part Number: FQPF8N60CFT
• Description: MOSFET N-CH 600V 6.26A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQPF8N60CFT

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 1.5 Ohm @ 3.13A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 6.26A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 36nC @ 10V
• Input Capacitance (ciss) @ Vds: 1255pF @ 25V
• Power - Max: 48W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQPF8N60CF Rev. A
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
10
10
10
-1
-2
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
vs. Temperature
-50
Operation in This Area
is Limited by R
T
J
V
, Junction Temperature [
DS
0
10
, Drain-SourceVoltage[V]
1
DS(on)
50
10
10
10
-1
-2
0
10
* Notes :
1. T
2. T
3. Single Pulse
-5
100
C
J
o
D=0.5
DC
0.02
0.01
= 150
0.05
C]
= 25
0.1
0.2
10
100ms
* Notes :
o
2
1. V
2. I
C
o
10ms
C
D
10
150
GS
= 250 킕
= 0 V
-4
1ms
single pulse
t
1
, Square Wave Pulse Duration [sec]
100
200
µ
10
s
10
-3
(Continued)
µ
s
10
3
4
10
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
-2
P
DM
3.0
2.5
2.0
1.5
1.0
0.5
0.0
* Notes :
-100
1. Z
2. Duty Factor, D=t
3. T
10
8
6
4
2
0
-1
25
? JC
JM
(t) = 2.6 ? /W Max.
- T
vs. Temperature
C
vs. Case Temperature
t
1
= P
t
2
DM
-50
10
* Z
1
0
50
/t
? JC
2
(t)
T
T
J
, Junction Temperature [
C
, Case Temperature [
0
10
1
75
50
100
100
o
o
C]
C]
* Notes :
125
1. V
2. I
150
www.fairchildsemi.com
D
GS
= 3.13 A
= 10 V
150
200