IRF840B Fairchild Semiconductor, IRF840B Datasheet - Page 4

• Manufacturer Part Number: IRF840B
• Description: MOSFET N-CH 500V 8A TO-220
• Manufacturer: Fairchild Semiconductor

Specifications of IRF840B

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 800 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 53nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 25V
• Power - Max: 134W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2005 Fairchild Semiconductor Corporation
Typical Characteristics
Figure 9-1. Maximum Safe Operating Area
10
10
10
1.2
1.1
1.0
0.9
0.8
10
10
10
8
6
4
2
0
-100
-1
-2
25
2
1
0
Figure 7. Breakdown Voltage Variation
10
0
Figure 10. Maximum Drain Current
-50
50
vs Case Temperature
T
V
vs Temperature
T
J
, Junction Temperature [
DS
C
10
0
, Drain-Source Voltage [V]
, Case Temperature [ ]
for IRF840B
Operation in This Area
is Limited by R
1
※
75
1. T
2. T
3. Single Pulse
Notes :
C
J
= 150
= 25
50
DS(on)
o
C
o
C
100
DC
100
10 ms
10
℃
(Continued)
2
o
C]
※
1 ms
1. V
2. I
Notes :
D
125
G S
100 s
= 250 µA
= 0 V
150
10 s
150
200
10
3
Figure 9-2. Maximum Safe Operating Area
10
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
10
10
-1
-2
-100
2
1
0
10
0
Figure 8. On-Resistance Variation
-50
T
V
vs Temperature
J
DS
, Junction Temperature [
10
for IRFS840B
0
, Drain-Source Voltage [V]
Operation in This Area
is Limited by R
1
※
1. T
2. T
3. Single Pulse
Notes :
C
J
= 150
= 25
50
o
DS(on)
DC
C
o
C
100 ms
10 ms
100
10
o
2
C]
1 ms
100 s
※
1. V
2. I
150
Notes :
D
G S
= 4.0 A
= 10 V
Rev. B, February 2005
200
10
3