FDD3670 Fairchild Semiconductor, FDD3670 Datasheet
FDD3670
Specifications of FDD3670
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FDD3670 Summary of contents
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... T =25 C unless otherwise noted A (Note (Note (Note 1a (Note 1b) A (Note 1) (Note 1b) Reel Size 13’’ June 2001 = DS(ON DS(ON Ratings Units 100 100 83 W 3.8 1.6 –55 to +175 C 1.8 C/W 96 C/W Tape width Quantity 16mm 2500 units FDD3670 Rev C(W) ...
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... A, Referenced – 250 250 A, Referenced 7 7 125 7 7 1.0 MHz GEN 7 2.7 A (Note determined by the user's board design C minimum mounting pad. Min Typ Max Units 360 mJ 7.3 A 100 100 nA –100 –7.2 mV 2490 pF 265 2.7 A 0.72 1.2 V FDD3670 Rev C(W) ...
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... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature 4.0V GS 4.5V 5.0V 5.5V 7.0V 10V DRAIN CURRENT ( 3. 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD3670 Rev C(W) 10 1.2 ...
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... Figure 8. Capacitance Characteristics 100 1000 0.1 Figure 10. Single Pulse Maximum 0.01 0 1MHz ISS C RSS C OSS 100 V , DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25° 100 1000 t , TIME (sec) 1 Power Dissipation. R ( °C/W JA P(pk ( Duty Cycle 100 FDD3670 Rev C(W) 1000 ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DenseTrench™ ...