FQPF10N60C Fairchild Semiconductor, FQPF10N60C Datasheet - Page 2

• Manufacturer Part Number: FQPF10N60C
• Description: MOSFET N-CH 600V 9.5A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF10N60C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 730 mOhm @ 4.75A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 9.5A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 57nC @ 10V
• Input Capacitance (ciss) @ Vds: 2040pF @ 25V
• Power - Max: 50W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.73 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 9.5 A
• Power Dissipation: 50000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQP10N60C / FQPF10N60C Rev. C
Package Marking and Ordering Information
Electrical Characteristics
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 14.2mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
Symbol
DS(on)
iss
oss
rss
g
gs
gd
rr
J
DSS
FQPF10N60C
≤ 9.5A, di/dt ≤ 200A/µs, V
FQP10N60C
DSS
/
AS
= 9.5 A, V
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source
On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
DD
DD
= 50V, R
≤ BV
FQPF10N60C
FQP10N60C
Parameter
Device
DSS,
G
= 25 Ω, Starting T
Starting T
J
T
= 25°C
C
= 25°C unless otherwise noted
J
= 25°C
Package
TO-220F
TO-220
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
/ dt = 100 A/µs
= 25 Ω
= 0 V, I
= 600 V, V
= 480 V, T
= 30 V, V
= -30 V, V
= V
= 10 V, I
= 40 V, I
= 25 V, V
= 300 V, I
= 480 V, I
= 10 V
= 0 V, I
= 0 V, I
Test Conditions
GS
2
, I
D
S
S
D
D
D
= 250 µA
= 9.5 A
= 9.5 A,
DS
GS
Reel Size
D
D
= 250 µA
DS
= 4.75 A
C
= 4.75 A
GS
= 9.5A,
= 9.5A,
= 125°C
= 0 V
= 0 V,
= 0 V
= 0 V
--
--
(Note 4, 5)
(Note 4, 5)
(Note 4)
(Note 4)
Tape Width
Min
600
2.0
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1570
Typ
18.5
166
144
420
0.7
0.6
8.0
6.7
4.2
18
23
69
77
44
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Max
2040
-100
0.73
100
215
150
300
165
4.0
9.5
1.4
Quantity
24
38
10
55
57
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www.fairchildsemi.com
50
50
Units
V/°C
µA
µA
nA
nA
nC
nC
nC
µC
pF
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V