FDP3682 Fairchild Semiconductor, FDP3682 Datasheet - Page 5

• Manufacturer Part Number: FDP3682
• Description: MOSFET N-CH 100V 32A TO-220AB
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP3682

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 36 mOhm @ 32A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 1250pF @ 25V
• Power - Max: 95W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.036 Ohm @ 10 V
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 95000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2010 Fairchild Semiconductor Corporation
FDB3682/FDP3682 Rev.B1
Typical Characteristics
Figure 11. Normalized Gate Threshold Voltage vs
2000
1000
Figure 13. Capacitance vs Drain to Source
100
20
1.2
1.0
0.8
0.6
0.4
0.1
-80
C
C
V
RSS
GS
OSS
= 0V, f = 1MHz
-40
Junction Temperature
V
C
C
DS
GD
T
DS
J
, DRAIN TO SOURCE VOLTAGE (V)
, JUNCTION TEMPERATURE (
+ C
0
GD
1
Voltage
40
80
V
C
T
GS
ISS
C
10
= V
= 25°C unless otherwise noted
120
C
DS
GS
o
C)
, I
+ C
D
= 250 A
160
GD
200
100
Figure 14. Gate Charge Waveforms for Constant
Breakdown Voltage vs Junction Temperature
5
10
8
6
4
2
0
1.2
1.1
1.0
0.9
Figure 12. Normalized Drain to Source
0
-80
V
DD
I
D
= 50V
= 250 A
-40
T
5
J
, JUNCTION TEMPERATURE (
Gate Currents
Qg, GATE CHARGE (nC)
0
40
10
WAVEFORMS IN
DESCENDING ORDER:
80
I
I
D
D
= 32A
= 16A
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120
15
o
C)
160
200
20