FQP13N50 Fairchild Semiconductor, FQP13N50 Datasheet - Page 3

• Manufacturer Part Number: FQP13N50
• Description: MOSFET N-CH 500V 12.5A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQP13N50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 430 mOhm @ 6.25A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12.5A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 2300pF @ 25V
• Power - Max: 170W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.43 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 12.5 A
• Power Dissipation: 170 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2002 Fairchild Semiconductor Corporation
Typical Characteristics
3500
3000
2500
2000
1500
1000
500
10
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
1
0
10
10
0
-1
Figure 5. Capacitance Characteristics
-1
Figure 3. On-Resistance Variation vs.
Top :
Bottom :
Figure 1. On-Region Characteristics
Drain Current and Gate Voltage
10 V
8.0 V
7.0 V
6.5 V
6.0 V
15 V
5.5 V
V
10
GS
V
V
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
10
20
10
D
, Drain Current [A]
0
0
C
C
C
rss
oss
iss
30
V
GS
= 20V
V
GS
C
C
C
iss
oss
rss
※ Notes :
= 10V
= C
= C
= C
40
1. 250μ s Pulse Test
2. T
10
10
※ Note : T
gs
gd
ds
1
C
1
+ C
+ C
= 25℃
gd
※ Notes :
gd
1. V
2. f = 1 MHz
(C
ds
J
GS
= shorted)
= 25℃
= 0 V
50
10
10
10
10
10
10
12
10
-1
-1
1
0
1
0
8
6
4
2
0
0.2
2
0
Figure 6. Gate Charge Characteristics
Figure 4. Body Diode Forward Voltage
Figure 2. Transfer Characteristics
5
0.4
150℃
Variation vs. Source Current
10
25℃
4
150℃
0.6
V
V
Q
15
GS
SD
and Temperature
25℃
G
, Source-Drain Voltage [V]
, Gate-Source Voltage [V]
, Total Gate Charge [nC]
20
0.8
V
DS
V
DS
V
= 400V
DS
= 250V
25
6
= 100V
-55℃
1.0
30
35
※ Notes :
※ Notes :
1.2
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 50V
= 0V
40
1.4
D
= 13.4 A
Rev. B, September 2002
45
1.6
50
10