HUFA76439S3S Fairchild Semiconductor, HUFA76439S3S Datasheet

HUFA76439S3S

Manufacturer Part Number

HUFA76439S3S

Description

MOSFET N-CH 60V 75A D2PAK

Manufacturer

Fairchild Semiconductor

Series

UltraFET™r

Datasheet

1.HUFA76439P3.pdf (10 pages)

Specifications of HUFA76439S3S

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

12 mOhm @ 75A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

75A

Vgs(th) (max) @ Id

3V @ 250µA

Gate Charge (qg) @ Vgs

84nC @ 10V

Input Capacitance (ciss) @ Vds

2745pF @ 25V

Power - Max

155W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.01 Ohms

Forward Transconductance Gfs (max / Min)

0.008 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 16 V

Continuous Drain Current

71 A

Power Dissipation

155 W

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

HUFA76439S3S

Manufacturer:

FAIRCHILD

Quantity:

12 500

Current page: 1 of 10
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71A, 60V, 0.014 Ohm, N-Channel, Logic

Level UltraFET® Power MOSFET

Packaging

Symbol

Absolute Maximum Ratings

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy

All Fairchild semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification.

Drain to Source Voltage (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain to Gate Voltage (R

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .V

Drain Current

Pulsed Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . UIS

Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Maximum Temperature for Soldering

NOTES:

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

1. T

Continuous (T

Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I

Derate Above 25

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

Package Body for 10s, See Techbrief TB334. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T

= 25

JEDEC TO-220AB

HUFA76439P3

C to 150

(FLANGE)

DRAIN

Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.

= 25

= 100

C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

SOURCE

C, V

DRAIN

= 20k ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V

GATE

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

= 10V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

= 5V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

= 4.5V) (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I

of the requirements, see AEC Q101 at: http://www.aecouncil.com/

SOURCE

GATE

Data Sheet

= 25

JEDEC TO-263AB

HUFA76439S3S

C, Unless Otherwise Specified

(FLANGE)

DRAIN

HUFA76439P3, HUFA76439S3S

Features

• Ultra Low On-Resistance

• Simulation Models

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• Switching Time vs R

Ordering Information

NOTE: When ordering, use the entire part number. Add the suffix T

to obtain the variant in tape and reel, e.g., HUFA76439S3ST.

HUFA76439P3

HUFA76439S3S

- r

- Temperature Compensated PSPICE® and SABER™

- Spice and SABER Thermal Impedance Models

- www.fairchildsemi.com

PART NUMBER

Electrical Models

DS(ON)

, T

DGR

DSS

STG

pkg

= 0.012

= 0.014

July 2002

HUFA76439P3, HUFA76439S3S

TO-220AB

TO-263AB

Figures 6, 17, 18

PACKAGE

-55 to 175

Curves

Figure 4

1.04

155

300

260

10V

HUFA76439P3, HUFA76439S3S Rev. B1

76439P

76439S

BRAND

UNITS

Related parts for HUFA76439S3S

HUFA76439S3S Summary of contents

Page 1

... UIS Rating Curve • Switching Time vs R Ordering Information PART NUMBER HUFA76439P3 HUFA76439S3S NOTE: When ordering, use the entire part number. Add the suffix T to obtain the variant in tape and reel, e.g., HUFA76439S3ST Unless Otherwise Specified DSS DGR , T J STG July 2002 = 0 ...

Page 2

... MIN TYP (Figure 12 0.010 - 0.0117 - 0.0125 - - - - - - - 16 - 300 - 29 - 105 - - - - - 11 - 125 - 45 - 125 - - = 30V 1.0mA - 2 2745 - 840 - 145 MIN TYP - - - - - - - - HUFA76439P3, HUFA76439S3S Rev. B1 MAX UNITS - 250 A 100 0.012 0.014 0.015 o 0.96 C C/W 470 200 ns 205 255 MAX UNITS 1. 140 nC ...

Page 3

... FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION ( PULSE WIDTH (s) FIGURE 4. PEAK CURRENT CAPABILITY V = 10V 4. 100 125 150 CASE TEMPERATURE ( C) C CASE TEMPERATURE NOTES: DUTY FACTOR PEAK FOR TEMPERATURES o ABOVE 25 C DERATE PEAK CURRENT AS FOLLOWS: 175 - 150 - HUFA76439P3, HUFA76439S3S Rev. B1 175 ...

Page 4

... PULSE DURATION = DUTY CYCLE = 0.5% MAX DRAIN TO SOURCE VOLTAGE (V) DS FIGURE 8. SATURATION CHARACTERISTICS 2.5 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX 2.0 1.5 1.0 0.5 -80 - JUNCTION TEMPERATURE ( J RESISTANCE vs JUNCTION TEMPERATURE HUFA76439P3, HUFA76439S3S Rev +1] DSS 10V = 3. 10V 75A GS D 120 160 200 o C) ...

Page 5

... A D 1.1 1.0 0.9 -80 - JUNCTION TEMPERATURE ( J VOLTAGE vs JUNCTION TEMPERATURE V = 30V WAVEFORMS IN DESCENDING ORDER GATE CHARGE (nC) g GATE CURRENT V = 10V 30V 75A GATE TO SOURCE RESISTANCE ( ) GS FIGURE 16. SWITCHING TIME vs GATE RESISTANCE HUFA76439P3, HUFA76439S3S Rev. B1 120 160 160 200 50A = 25A d(OFF d(ON ...

Page 6

... FIGURE 21. SWITCHING TIME TEST CIRCUIT ©2002 Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 18. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g( g(TH FIGURE 20. GATE CHARGE WAVEFORMS d(ON 90% 10% 50% PULSE WIDTH FIGURE 22. SWITCHING TIME WAVEFORM HUFA76439P3, HUFA76439S3S Rev 10V GS t OFF d(OFF 90% 10% 90% 50% ...

Page 7

... Fairchild Semiconductor Corporation DPLCAP 10 RSLC2 - 6 ESG 8 EVTHRES + - + 19 LGATE EVTEMP 8 RGATE - + RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 DBREAK ESLC DBODY RDRAIN EBREAK MWEAK MMED MSTRO LSOURCE 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUFA76439P3, HUFA76439S3S Rev. B1 DRAIN 2 SOURCE 3 ...

Page 8

... LGATE EVTEMP GATE RGATE - + RLGATE S1A S2A S1B S2B EGS RSLC1 RDBREAK 51 72 ISCL DBREAK 50 71 RDRAIN MWEAK 8 EBREAK MMED + MSTRO CIN 8 7 RSOURCE RLSOURCE RBREAK RVTEMP EDS + RVTHRES HUFA76439P3, HUFA76439S3S Rev. B1 LDRAIN DRAIN 2 RLDRAIN RDBODY DBODY LSOURCE SOURCE 3 VBAT ...

Page 9

... Fairchild Semiconductor Corporation JUNCTION th RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 tl CASE HUFA76439P3, HUFA76439S3S Rev. B1 ...

Page 10

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