FDP8447L Fairchild Semiconductor, FDP8447L Datasheet - Page 4

• Manufacturer Part Number: FDP8447L
• Description: MOSFET N-CH 40V 12A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDP8447L

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 40V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 49nC @ 10V
• Input Capacitance (ciss) @ Vds: 2500pF @ 20V
• Power - Max: 2W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0087 Ohms
• Drain-source Breakdown Voltage: 40 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 12 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2007 Fairchild Semiconductor Corporation
FDP8447L Rev.B
Typical Characteristics
100
300
Figure 7.
0.1
10
10
10
20
1
8
6
4
2
0
1
0.01
0.1
0
Figure 9.
Figure 11. Forward Bias Safe
I
THIS AREA IS
LIMITED BY r
D
= 14A
Switching Capability
Gate Charge Characteristics
V
DS
0.1
Operating Area
Unclamped Inductive
SINGLE PULSE
T
R
T
t
10
, DRAIN to SOURCE VOLTAGE (V)
AV
J
θ
C
JC
= MAX RATED
= 25
, TIME IN AVALANCHE(ms)
Q
DS(on)
= 2.1
g
1
, GATE CHARGE(nC)
V
o
C
DD
T
o
C/W
J
= 20V
= 125
1
V
20
DD
o
T
C
= 10V
J
= 25°C unless otherwise noted
T
J
10
10
= 25
V
DD
30
o
C
= 30V
100
10ms
100ms
100us
1ms
300
100
40
4
10000
1000
1000
100
100
50
80
60
40
20
Figure 10.
10
25
10
0.1
0
Figure 12.
-4
Figure 8.
Limited by Package
R
Current vs Case Temperature
f = 1MHz
V
θ
GS
JC
= 2.1
= 0V
50
10
V
V
GS
DS
Maximum Continuous Drain
Power Dissipation
-3
to Source Voltage
o
C/W
, DRAIN TO SOURCE VOLTAGE (V)
T
= 10V
Single Pulse Maximum
Capacitance vs Drain
C
t, PULSE WIDTH (s)
,
CASE TEMPERATURE (
75
10
1
-2
V
GS
= 4.5V
100
V
10
GS
-1
= 10V
SINGLE PULSE
R
T
C
θ
C
C
C
JC
= 25
oss
rss
iss
o
10
C )
= 2.1
125
10
o
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C
0
o
C/W
150
10
40
1