HUF75639S3 Fairchild Semiconductor, HUF75639S3 Datasheet
HUF75639S3
Specifications of HUF75639S3
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Related parts for HUF75639S3
HUF75639S3 Summary of contents
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... TO-247 HUF75639P3 TO-220AB HUF75639S3S TO-263AB HUF75639S3 TO-262AA NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-263AB variant in tape and reel, e.g., HUF75639S3ST. Packaging JEDEC STYLE TO-247 DRAIN (TAB) JEDEC TO-263AB GATE SOURCE Product reliability information can be found at http://www.fairchildsemi.com/products/discrete/reliability/index.html For severe environments, see our Automotive HUFA series ...
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... DGR Figure 4 DM Figures 6, 14 200 D 1. -55 to 175 J STG 300 L 260 pkg MIN TYP 100 - - - o = 150 0.021 - - - - - - - - - 50V, - 110 DD 56A 0. 1.0mA g(REF) - 3 HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B UNITS MAX UNITS - 250 A 100 0.025 o 0. C/W 110 130 4 ...
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... C) FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT RECTANGULAR PULSE DURATION (s) MIN TYP - 2000 - 500 - 65 MIN TYP - - - - - - 100 125 T , CASE TEMPERATURE ( C CASE TEMPERATURE P DM NOTES: DUTY FACTOR PEAK HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B MAX UNITS - MAX UNITS 1.25 V 110 ns 320 nC 150 175 ...
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... DSS STARTING T o STARTING T = 150 0.001 0. TIME IN AVALANCHE (ms) AV 100 PULSE DURATION = 80 s DUTY CYCLE = 0.5% MAX V = 15V 1.5 3.0 4 GATE TO SOURCE VOLTAGE (V) GS FIGURE 8. TRANSFER CHARACTERISTICS HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev 150 + 0 175 C o -55 C 6.0 7.5 ...
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... C) FIGURE 12. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE WAVEFORMS IN DESCENDING ORDER 50V Qg, GATE CHARGE (nC -80 - 120 T , JUNCTION TEMPERATURE ( J JUNCTION TEMPERATURE ISS C RSS C OSS C ISS C OSS C RSS DRAIN TO SOURCE VOLTAGE ( 56A 37A 18A HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev 250 160 200 0V 1MHz = ...
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... Fairchild Semiconductor Corporation DUT 0. DUT g(REF DUT DSS FIGURE 15. UNCLAMPED ENERGY WAVEFORMS Q g(TOT g(10 10V g(TH FIGURE 17. GATE CHARGE WAVEFORM d(ON 90% 10% 50% PULSE WIDTH FIGURE 19. RESISTIVE SWITCHING WAVEFORMS HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev 20V GS t OFF d(OFF 90% 10% 90% 50% ...
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... DPLCAP 5 10 RSLC1 51 + RSLC2 5 ESLC RDRAIN 6 ESG 8 EVTHRES + EVTEMP 8 RGATE - + MSTRO CIN 8 S1A S2A S1B S2B EGS EDS LDRAIN DRAIN RLDRAIN DBREAK DBODY 18 EBREAK - MWEAK MMED LSOURCE SOURCE 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT + 8 22 RVTHRES HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev ...
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... RLGATE CIN S1A S2A S1B S2B EGS EDS LDRAIN 5 RLDRAIN RSLC1 RDBREAK 51 72 RDBODY ISCL DBREAK 50 71 RDRAIN MWEAK DBODY EBREAK MMED + MSTRO 17 18 LSOURCE - 8 7 RSOURCE RLSOURCE RBREAK 17 18 RVTEMP VBAT RVTHRES HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B DRAIN 2 SOURCE 3 ...
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... Fairchild Semiconductor Corporation JUNCTION TH RTHERM1 CTHERM1 6 RTHERM2 CTHERM2 5 RTHERM3 CTHERM3 4 RTHERM4 CTHERM4 3 RTHERM5 CTHERM5 2 RTHERM6 CTHERM6 TL CASE HUF75639G3, HUF75639P3, HUF75639S3S, HUF75639S3 Rev. B ...
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... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ ...