FDP5N50NZ Fairchild Semiconductor, FDP5N50NZ Datasheet - Page 3
![MOSFET N-CH 500V 4.5A TO220](/photos/28/11/281175/fdp5n50nz_sml.jpg)
FDP5N50NZ
Manufacturer Part Number
FDP5N50NZ
Description
MOSFET N-CH 500V 4.5A TO220
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet
1.FDP5N50NZ.pdf
(10 pages)
Specifications of FDP5N50NZ
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.5 Ohm @ 2.25A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
4.5A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
440pF @ 25V
Power - Max
78W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.38 Ohms
Forward Transconductance Gfs (max / Min)
3.54 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
25 V
Continuous Drain Current
4.5 A
Power Dissipation
78 W
Maximum Operating Temperature
+ 125 C
Mounting Style
Through Hole
Gate Charge Qg
9 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP5N50NZ
Manufacturer:
Fairchi/ON
Quantity:
17 381
Part Number:
FDP5N50NZ
Manufacturer:
ON/安森美
Quantity:
20 000
FDP5N50NZ / FDPF5N50NZ Rev. A
Typical Performance Characteristics
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
600
500
400
300
200
100
0.1
10
1
4
3
2
1
0
0.1
0.1
0
V
C
C
C
GS
rss
oss
iss
=
Drain Current and Gate Voltage
15.0 V
10.0 V
V
V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
2
DS
DS
, Drain-Source Voltage [V]
, Drain-Source Voltage[V]
I
D
, Drain Current [A]
4
C iss = C gs + C gd
C oss = C ds + C gd
C rss = C gd
1
1
V
GS
*Notes:
= 10V
1. 250
2. T
6
*Notes: T
C
V
= 25
GS
(
C ds = shorted
s Pulse Test
*Notes:
= 20V
o
1. V
2. f = 1MHz
C
10
8
C
GS
= 25
10
= 0V
o
C
)
20
10
30
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
0.1
20
10
20
10
10
1
1
8
6
4
2
0
0.4
2
0
*Notes:
1. V
2. 250
V
DS
SD
Variation vs. Source Current
and Temperature
0.6
, Body Diode Forward Voltage [V]
2
= 20V
s Pulse Test
V
Q
150
GS
g
, Total Gate Charge [nC]
, Gate-Source Voltage[V]
V
V
V
o
C
DS
DS
DS
4
= 100V
= 250V
= 400V
0.8
4
150
o
25
C
o
C
1.0
6
-55
*Notes:
1. V
2. 250
*Notes: I
o
6
C
GS
25
= 0V
s Pulse Test
o
C
1.2
D
8
= 4.5A
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