FQA13N50CF Fairchild Semiconductor, FQA13N50CF Datasheet - Page 4

• Manufacturer Part Number: FQA13N50CF
• Description: MOSFET N-CH 500V 15A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: FRFET™r

Specifications of FQA13N50CF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 56nC @ 10V
• Input Capacitance (ciss) @ Vds: 2055pF @ 25V
• Power - Max: 218W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.48 Ohms
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 15 A
• Power Dissipation: 218 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FQA13N50CF Rev. A1
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9. Maximum Safe Operating Area
Figure 11. Transient Thermal Response Curve
10
10
10
10
-1
2
1
0
10
1.2
1.1
1.0
0.9
0.8
0
-100
vs. Temperature
-50
V
DS
10
T
, Drain-Source Voltage [V]
1
J
Operation in This Area
is Limited by R
, Junction Temperature [
Notes :
1. T
2. T
3. Single Pulse
0
C
J
1 0
1 0
= 150
= 25
1 0
- 1
- 2
°
1 0
0
C
°
C
100 ms
DS(on)
- 5
50
D = 0 .5
0 .0 5
0 .0 2
0 .0 1
DC
0 .1
0 .2
10 ms
10
1 ms
2
100
100
1 0
°
C]
µ
-4
s in g le p u ls e
Notes :
s
1. V
2. I
10
t
D
GS
1
µ
= 250
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
150
s
= 0 V
µ
A
10
3
1 0
200
- 3
(Continued)
4
1 0
Figure 8. On-Resistance Variation
Figure 10. Maximum Drain Current
- 2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
16
14
12
10
8
6
4
2
0
-100
25
1 0
N o t e s :
vs. Temperature
P
1 . Z
2 . D u ty F a c to r , D = t
3 . T
vs. Case Temperature
- 1
DM
θ
J M
J C
( t) = 0 .5 8
- T
-50
C
50
t
= P
1
t
2
D M
1 0
T
T
°
J
, Junction Temperature [
C /W M a x .
* Z
0
C
, Case Temperature [
0
1
θ
/ t
J C
2
75
( t)
50
1 0
1
100
100
°
C]
°
C]
125
Notes :
1. V
2. I
www.fairchildsemi.com
150
D
GS
= 7.5 A
= 10 V
200
150