FQA46N15 Fairchild Semiconductor, FQA46N15 Datasheet - Page 2
![MOSFET N-CH 150V 50A TO-3P](/photos/26/98/269851/to3p_sml.jpg)
FQA46N15
Manufacturer Part Number
FQA46N15
Description
MOSFET N-CH 150V 50A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQA46N15.pdf
(8 pages)
Specifications of FQA46N15
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
42 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
110nC @ 10V
Input Capacitance (ciss) @ Vds
3250pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.042 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
36 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 25 V
Continuous Drain Current
50 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQA46N15
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQA46N15
Manufacturer:
FSC
Quantity:
86 755
FQA46N15 / FQA46N15_F109 Rev. A1
Package Marking and Ordering Information
Electrical Characteristics
NOTES:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.43mH, I
3. I
4. Pulse Test : Pulse width ≤ 300µs, Duty cycle ≤ 2%
5. Essentially independent of operating temperature
Off Characteristics
BV
∆BV
∆T
I
I
I
On Characteristics
V
R
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain-Source Diode Characteristics and Maximum Ratings
I
I
V
t
Q
Device Marking
Symbol
DSS
GSSF
GSSR
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
SD
DS(on)
iss
oss
rss
g
gs
gd
rr
J
DSS
≤ 45.6A, di/dt ≤300A/µs, V
DSS
FQA46N15
FQA46N15
/
AS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Gate-Body Leakage Current, Reverse
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Maximum Continuous Drain-Source Diode Forward Current
Maximum Pulsed Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
=50A, V
DD
= 25V, R
DD
FQA46N15_F109
≤ BV
FQA46N15
Device
Parameter
G
DSS,
= 25 Ω, Starting T
Starting T
J
T
= 25°C
C
J
= 25°C unless otherwise noted
= 25°C
Package
TO-3PN
TO-3PN
V
I
V
V
V
V
V
V
V
V
f = 1.0 MHz
V
R
V
V
V
V
dI
D
GS
DS
DS
GS
GS
DS
GS
DS
DS
DD
DS
GS
GS
GS
G
F
= 250 µA, Referenced to 25°C
= 25 Ω
/ dt = 100 A/µs
= 150 V, V
= 120 V, T
= V
= 40 V, I
= 25 V, V
= 120 V, I
= 0 V, I
= 25 V, V
= -25 V, V
= 10 V, I
= 75 V, I
= 10 V
= 0 V, I
= 0 V, I
2
Test Conditions
GS
Reel Size
, I
D
S
S
D
D
D
D
=50A
= 45.6 A,
= 250 µA
DS
GS
D
= 250 µA
DS
= 25A
GS
C
= 25A
= 45.6A,
--
--
= 45.6A,
= 150°C
= 0 V
= 0 V,
= 0 V
= 0 V
(Note 4)
(Note 4, 5)
(Note 4, 5)
(Note 4)
Tape Width
Min
--
--
150
2.0
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
--
0.033
Typ
2500
0.55
0.16
520
100
320
210
200
130
36
35
85
15
41
--
--
--
--
--
--
--
--
--
Quantity
0.042
Max Units
3250
-100
100
670
130
650
430
410
110
200
4.0
1.5
www.fairchildsemi.com
10
80
50
--
--
1
--
--
--
--
--
30
30
V/°C
µA
µA
nA
nA
pF
nC
nC
nC
µC
pF
pF
ns
ns
ns
ns
ns
Ω
V
V
S
A
A
V