FDP33N25 Fairchild Semiconductor, FDP33N25 Datasheet - Page 4

• Manufacturer Part Number: FDP33N25
• Description: MOSFET N-CH 250V 33A TO-220
• Manufacturer: Fairchild Semiconductor
• Series: UniFET™r

Specifications of FDP33N25

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 94 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 250V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 48nC @ 10V
• Input Capacitance (ciss) @ Vds: 2135pF @ 25V
• Power - Max: 235W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.094 Ohms
• Forward Transconductance Gfs (max / Min): 26.6 S
• Drain-source Breakdown Voltage: 250 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 33 A
• Power Dissipation: 235 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

FDP33N25 / FDPF33N25T Rev. B
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
Figure 9-1. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
40
30
20
10
10
10
10
10
0
25
-1
2
1
0
1.2
1.1
1.0
0.9
0.8
10
-100
0
vs. Temperature
vs. Case Temperature
for FDP33N25
Operation in This Area
is Limited by R
50
-50
V
T
T
DS
C
DS(on)
, Case Temperature [
J
, Junction Temperature [
, Drain-Source Voltage [V]
0
75
10
1
DC
50
100 ms
100
10 ms
o
* Notes :
C]
100
1. T
2. T
3. Single Pulse
o
1 ms
C
J
C]
= 150
= 25
10
* Notes :
125
1. V
2. I
o
2
100
C
o
C
D
GS
150
= 250
= 0 V
µ
s
10
µ
A
µ
s
150
200
(Continued)
4
Figure 8. On-Resistance Variation
Figure 9-2. Maximum Safe Operating Area
10
10
10
10
-1
2
1
0
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
-100
Operation in This Area
is Limited by R
vs. Temperature
for FDPF33N25T
-50
DS(on)
V
DS
T
, Drain-Source Voltage [V]
J
, Junction Temperature [
0
10
* Notes :
1
1. T
2. T
3. Single Pulse
C
J
DC
= 150
= 25
100 ms
o
50
C
o
C
10 ms
1 ms
100
100
o
C]
10
µ
10
s
2
* Notes :
µ
1. V
2. I
s
150
www.fairchildsemi.com
D
GS
= 16.5 A
= 10 V
200