FQA70N10 Fairchild Semiconductor, FQA70N10 Datasheet - Page 8

• Manufacturer Part Number: FQA70N10
• Description: MOSFET N-CH 100V 70A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA70N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 35A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 3300pF @ 25V
• Power - Max: 214W
• Mounting Type: Through Hole
• Package / Case: TO-3P-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 48 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 70 A
• Power Dissipation: 214000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 70A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 23mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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