FDPF8N50NZF Fairchild Semiconductor, FDPF8N50NZF Datasheet

MOSFET N-CH 500V 7A TO-220F

FDPF8N50NZF

Manufacturer Part Number
FDPF8N50NZF
Description
MOSFET N-CH 500V 7A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET-II™r
Datasheet

Specifications of FDPF8N50NZF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 3.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
735pF @ 25V
Power - Max
40W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.85 Ohms
Forward Transconductance Gfs (max / Min)
6.3 S
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
4.2 A to 7 A
Power Dissipation
40 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Gate Charge Qg
14 nC
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2010 Fairchild Semiconductor Corporation
FDP8N50NZF / FDPF8N50NZF Rev. A
MOSFET Maximum Ratings
Thermal Characteristics
*Drain current limited by maximum junction temperature
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP8N50NZF / FDPF8N50NZF
N-Channel MOSFET
500V, 7A, 1
Features
• R
• Low Gate Charge ( Typ. 14nC)
• Low C
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
JC
CS
JA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.85 ( Typ.) @ V
( Typ. 5pF)
G D S
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
TO-220
FDP Series
GS
= 10V, I
D
T
= 3.25A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
G
D
o
S
C)
C
C
= 25
= 100
1
o
C
TO-220F
FDPF Series
(potted)
o
This N-Channel enhancement mode power field effect transistors
are produced using Fairchild's proprietary, planar stripe, DMOS
technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
Description
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP8N50NZF FDPF8N50NZF
FDP8N50NZF
G
G
130
0.96
62.5
4.2
28
0.5
7
1
-55 to +150
500
±25
300
93
13
15
7
UniFET-II
FDPF8N50NZF Units
D
D
S
S
0.32
4.2*
28*
62.5
40
7*
3.1
February 2010
www.fairchildsemi.com
-
switching
Units
W/
o
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
tm
TM

Related parts for FDPF8N50NZF

FDPF8N50NZF Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. CS R Thermal Resistance, Junction to Ambient JA ©2010 Fairchild Semiconductor Corporation FDP8N50NZF / FDPF8N50NZF Rev. A Description = 10V 3.25A This N-Channel enhancement mode power field effect transistors D are produced using Fairchild's proprietary, planar stripe, DMOS technology. This advance technology has been especially tailored to ...

Page 2

... Starting 7A, di/dt  200A/s, V  Starting DSS 4. Pulse Test: Pulse width  300s, Duty Cycle  Essentially Independent of Operating Temperature Typical Characteristics FDP8N50NZF / FDPF8N50NZF Rev. A Package Reel Size TO-220 - TO-220F - unless otherwise noted C Test Conditions I = 250 ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 1200 C iss = oss = oss C rss = C gd 900 C iss 600 300 C rss 0 0 Drain-Source Voltage [V] DS FDP8N50NZF / FDPF8N50NZF Rev. A Figure 2. Transfer Characteristics *Notes:  1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 100 20V GS o *Note: T ...

Page 4

... Case Temperature Case Temperature [? ] C  Figure 11. Transient Thermal Response Curve -FDPF8N50NZF  5 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single pulse 0.01 ...

Page 5

... FDP8N50NZF / FDPF8N50NZF Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP8N50NZF / FDPF8N50NZF Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDP8N50NZF / FDPF8N50NZF Rev. A TO-220 7 www.fairchildsemi.com ...

Page 8

... Package Dimensions * Front/Back Side Isolation Voltage : AC 2500V FDP8N50NZF / FDPF8N50NZF Rev. A TO-220F Potted 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP8N50NZF / FDPF8N50NZF Rev. A FPS™ PowerTrench F-PFS™ PowerXS™ ® FRFET Programmable Active Droop™ SM ® Global Power Resource QFET Green FPS™ ...

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