FQA36P15 Fairchild Semiconductor, FQA36P15 Datasheet - Page 3
![MOSFET P-CH 150V 36A TO-3P](/photos/26/98/269851/to3p_sml.jpg)
FQA36P15
Manufacturer Part Number
FQA36P15
Description
MOSFET P-CH 150V 36A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQA36P15.pdf
(8 pages)
Specifications of FQA36P15
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
90 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
36A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
105nC @ 10V
Input Capacitance (ciss) @ Vds
3320pF @ 25V
Power - Max
294W
Mounting Type
Through Hole
Package / Case
TO-3P-3 (Straight Leads)
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.09 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
19.5 S
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
36 A
Power Dissipation
294000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQA36P15
Manufacturer:
FSC
Quantity:
5 000
Company:
Part Number:
FQA36P15
Manufacturer:
FSC
Quantity:
86 755
FQA36P15 / FQA36P15_F109 Rev. B2
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 3. On-Resistance Variation vs.
Figure 5. Capacitance Characteristics
8000
7000
6000
5000
4000
3000
2000
1000
10
10
10
10
-1
0.4
0.3
0.2
0.1
0.0
2
1
0
10
0
10
-1
0
Top :
Bottom : -4.5 V
-1
Drain Current and Gate Voltage
-15.0 V
-10.0 V
20
-8.0 V
-7.0 V
-6.0 V
-5.5 V
-5.0 V
V
C
GS
oss
C
iss
-V
40
-V
DS
C
DS
rss
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
-I
10
10
60
D
0
, Drain Current [A]
0
80
V
GS
= -10V
100
C
C
C
iss
oss
rss
※
= C
= C
= C
10
120
1. 250µ s Pulse Test
2. T
10
※
Notes :
gs
1
gd
ds
1
C
Note : T
+ C
+ C
= 25 ℃
V
gd
gd
GS
(C
※
140
J
1. V
2. f = 1 MHz
= -20V
ds
= 25 ℃
Note ;
= shorted)
GS
= 0 V
160
3
Figure 2. Transfer Characteristics
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
10
10
10
10
-1
10
10
10
10
14
12
10
2
1
0
8
6
4
2
0
2
-1
2
1
0
0.0
0
Variation vs. Source Current
and Temperatue
25
175 ℃
10
o
0.5
C
175
o
25 ℃
20
4
C
1.0
-V
-V
GS
Q
, Gate-Source Voltage [V]
SD
G
, Source-Drain voltage [V]
30
, Total Gate Charge [nC]
1.5
-55
V
DS
o
40
C
6
= -120V
2.0
V
DS
V
= -75V
DS
50
= -30V
2.5
※
60
1. V
2. 250µ s Pulse Test
※
Notes :
8
1. V
2. 250µ s Pulse Test
3.0
DS
Notes :
= -40V
GS
※
= 0V
Note : I
70
www.fairchildsemi.com
3.5
D
= -36A
80
10
4.0
90