FQA32N20C Fairchild Semiconductor, FQA32N20C Datasheet - Page 4

• Manufacturer Part Number: FQA32N20C
• Description: MOSFET N-CH 200V 32A TO-3P
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQA32N20C

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 82 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 32A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 110nC @ 10V
• Input Capacitance (ciss) @ Vds: 2220pF @ 25V
• Power - Max: 204W
• Mounting Type: Through Hole
• Package / Case: TO-3PN-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.082 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 20 S
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 32 A
• Power Dissipation: 204000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2004 Fairchild Semiconductor Corporation
Typical Characteristics
10
1.2
1.1
1.0
0.9
0.8
10
10
10
10
-100
-1
3
2
1
0
10
Figure 9. Maximum Safe Operating Area
0
Figure 7. Breakdown Voltage Variation
※
1. T
2. T
3. Single Pulse
Notes :
C
J
= 150
= 25
-50
o
C
o
Operation in This Area
is Limited by R
C
T
V
J
DS
, Junction Temperature [
vs Temperature
, Drain-Source Voltage [V]
0
1 0
1 0
1 0
10
DS(on)
1
-1
-2
0
1 0
-5
0 .0 2
D = 0 .5
0 .0 5
0 .0 1
50
0 .1
0 .2
DC
10 ms
Figure 11. Transient Thermal Response Curve
100
1 ms
1 0
o
(Continued)
C]
-4
100
s in g le p u ls e
10
※
1. V
2. I
2
t
Notes :
µ
1
s
D
, S q u a r e W a v e P u ls e D u r a t io n [ s e c ]
GS
= 250 µA
150
= 0 V
1 0
-3
200
1 0
-2
40
30
20
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
25
-100
※
1 0
1 . Z
2 . D u t y F a c t o r , D = t
3 . T
Figure 8. On-Resistance Variation
N o te s :
Figure 10. Maximum Drain Current
-1
θ
J M
J C
P
( t) = 0 . 6 1
-50
- T
DM
50
C
= P
vs Case Temperature
T
T
D M
J
, Junction Temperature [
C
t
1 0
vs Temperature
℃
, Case Temperature [ ]
1
* Z
0
t
/W M a x .
2
0
1
θ
75
/ t
J C
2
( t)
50
100
1 0
1
100
℃
o
C]
125
※
1. V
2. I
150
Notes :
D
GS
= 16 A
= 10 V
200
150
Rev.A, March 2004