FQPF85N06 Fairchild Semiconductor, FQPF85N06 Datasheet - Page 3

• Manufacturer Part Number: FQPF85N06
• Description: MOSFET N-CH 60V 53A TO-220F
• Manufacturer: Fairchild Semiconductor
• Series: QFET™r

Specifications of FQPF85N06

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 26.5A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 53A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 112nC @ 10V
• Input Capacitance (ciss) @ Vds: 4120pF @ 25V
• Power - Max: 62W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.01 Ohms
• Forward Transconductance Gfs (max / Min): 44 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 53 A
• Power Dissipation: 62 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

©2001 Fairchild Semiconductor Corporation
Typical Characteristics
8000
6000
4000
2000
0.015
0.012
0.009
0.006
0.003
0.000
10
10
10
0
10
2
1
0
10
-1
-1
0
Top :
Bottom : 4.5 V
Figure 5. Capacitance Characteristics
Figure 3. On-Resistance Variation vs.
Figure 1. On-Region Characteristics
15.0 V
Drain Current and Gate Voltage
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
V
50
GS
100
V
V
C
C
DS
DS
C
rss
V
oss
iss
, Drain-Source Voltage [V]
, Drain-Source Voltage [V]
I
GS
D
10
, Drain Current [A]
= 20V
0
V
GS
150
10
= 10V
※ Notes :
0
1. 250μ s Pulse Test
2. T
C
= 25℃
200
C
C
C
iss
oss
rss
250
= C
= C
= C
10
※ Note : T
gs
gd
ds
1
+ C
+ C
gd
※ Notes :
gd
(C
1. V
2. f = 1 MHz
300
ds
J
10
GS
= 25℃
= shorted)
1
= 0 V
350
10
10
10
10
10
10
2
1
0
2
1
0
12
10
0.2
2
8
6
4
2
0
0
Figure 4. Body Diode Forward Voltage
Figure 6. Gate Charge Characteristics
175 ℃
Figure 2. Transfer Characteristics
25 ℃
175 ℃
0.4
Variation vs. Source Current
20
4
0.6
Q
V
V
and Temperature
GS
SD
G
25 ℃
, Total Gate Charge [nC]
-55 ℃
, Gate-Source Voltage [V]
, Source-Drain voltage [V]
40
0.8
V
DS
V
DS
= 48V
= 30V
6
1.0
60
※ Notes :
1.2
※ Notes :
1. V
2. 250μ s Pulse Test
1. V
2. 250μ s Pulse Test
※ Note : I
8
DS
GS
= 30V
80
= 0V
D
1.4
= 85A
Rev. A1. May 2001
100
10
1.6