This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... Turn-Off Fall Time f t Turn-Off Time OFF Drain-Source Diode Characteristics V Drain-Source Diode Forward Voltage SD t Reverse Recovery Time rr Q Reverse Recovery Charge rr Notes 1mH 36A 54V 10V FDP5800 Rev 25°C unless otherwise noted C Conditions I = 250µ 48V ±20V 250µ ...
... C iss = 9000 C oss = iss C rss = C gd 7500 6000 4500 C oss 3000 C rss 1500 100 - Drain-Source Voltage [V] DS FDP5800 Rev. A Figure 2. Transfer Characteristics 1000 100 Top : 10 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3 Figure 4. Body Diode Forward Voltage 1000 100 20V ...