FQAF11N90C Fairchild Semiconductor, FQAF11N90C Datasheet
FQAF11N90C
Manufacturer Part Number
FQAF11N90C
Description
MOSFET N-CH 900V 7A TO-3PF
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet
1.FQAF11N90C.pdf
(8 pages)
Specifications of FQAF11N90C
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1.1 Ohm @ 3.5A, 10V
Drain To Source Voltage (vdss)
900V
Current - Continuous Drain (id) @ 25° C
7A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
80nC @ 10V
Input Capacitance (ciss) @ Vds
3290pF @ 25V
Power - Max
120W
Mounting Type
Through Hole
Package / Case
TO-3PF-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
1.1 Ohm @ 10 V
Drain-source Breakdown Voltage
900 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
120000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FQAF11N90C
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FQAF11N90C
Manufacturer:
FSC
Quantity:
86 755
Part Number:
FQAF11N90C
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
This is to inform you that a design and/or process change will be made to the following
product(s). This notification is for your information and concurrence.
If you require data or samples to qualify this change, please contact Fairchild Semiconductor
within 30 days of receipt of this notification.
Updated process quality documentation, such as FMEAs and Control Plans, are available for
viewing upon request.
If you have any questions concerning this change, please contact:
PCN Originator:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Implementation of change:
Expected 1st Device Shipment Date: 2007/08/26
Earliest Year/Work Week of Changed Product: H35
Change Type Description: Passivation Material, Fab Process Change
Description of Change (From): There are no passivation layer.
Description of Change (To): Adding Passivation layer on front metal.
Reason for Change : To improve product quality.
Qual/REL Plan Numbers : Q20070212
All items were passed.
Qualification :
All items were passed.
Results/Discussion
Test: (Autoclave)
Lot
Q20070212AAACLV
Q20070212ABACLV
Q20070212ACACLV
Test: (High Temperature Gate Bias)
Lot
Q20070212AAHTGB
Q20070212AAHTGB
Q20070212ABHTGB
Q20070212ABHTGB
DESIGN/PROCESS CHANGE NOTIFICATION -- FINAL
Technical Contact:
Name: LEE, JEONGSOO
E-mail: JEONGSOO.LEE@fairchildsemi.com
Phone: 82-32-680-1311
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
FQPF6N90C
Device
FQPF6N90C
FQPF6N90C
FQPF6N90C
500-HOURS
0/77
0/77
96-HOURS
0/77
0/77
0/77
1000-HOURS
0/77
0/77
Date Issued On : 2007/06/26
Date Created : 2007/05/17
Failure Code
Failure Code
PCN# : Q2072004
Pg. 1
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FQAF11N90C Summary of contents
Page 1
... This is to inform you that a design and/or process change will be made to the following product(s). This notification is for your information and concurrence. If you require data or samples to qualify this change, please contact Fairchild Semiconductor within 30 days of receipt of this notification. Updated process quality documentation, such as FMEAs and Control Plans, are available for viewing upon request ...
Page 2
... Q20070212AATMCL1 FQPF6N90C Q20070212AATMCL1 FQPF6N90C Q20070212ABTMCL1 FQPF6N90C Q20070212ABTMCL1 FQPF6N90C Q20070212ACTMCL1 FQPF6N90C Q20070212ACTMCL1 FQPF6N90C Product Id Description : There are some QFET products. Affected FSIDs : FQA10N80C_F109 FQA7N80C_F109 FQA8N90C_F109 FQAF11N90C FQB6N60CTM_WS FQB8N60CTM_WS FQD5N60CTM_NL FQD6N60CTF_WS FQI5N60CTU FQP3N80C FQP5N60C FQP6N60C FQP7N80C FQP8N60C_F080 FQP8N80C_NL FQPF3N80C FQPF4N90CT FQPF5N60C_F105 FQPF6N80CT FQPF7N80C ...