FDP24N40 Fairchild Semiconductor, FDP24N40 Datasheet

MOSFET N-CH 400V 24A TO-220

FDP24N40

Manufacturer Part Number
FDP24N40
Description
MOSFET N-CH 400V 24A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDP24N40

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
175 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
24A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
60nC @ 10V
Input Capacitance (ciss) @ Vds
3020pF @ 25V
Power - Max
227W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.175 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
24 A
Power Dissipation
227000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
©2007 Fairchild Semiconductor Corporation
FDP24N40 / FDPF24N40 Rev. A
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDP24N40 / FDPF24N40
N-Channel MOSFET
400V, 24A, 0.175Ω
Features
• R
• Low gate charge ( Typ. 46nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improve dv/dt capability
• RoHS compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.140Ω ( Typ.)@ V
( Typ. 25pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G D S
GS
TO-220
FDP Series
= 10V, I
D
T
= 12A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
C unless otherwise noted
= 25
G
D
o
C)
S
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to mini-
mize on-state resistance, provide superior switching perfor-
mance, and withstand high energy pulse in the avalanche and
commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
TO-220F
FDPF Series
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FDP24N40
FDP24N40
G
14.4
227
0.55
62.5
1.8
24
96
0.5
-55 to +150
1296
22.7
400
±30
300
4.5
24
FDPF24N40
FDPF24N40
S
D
14.4*
62.5
December 2007
24*
96*
0.3
3.0
40
UniFET
-
www.fairchildsemi.com
Units
Units
o
W/
V/ns
C/W
mJ
mJ
o
o
W
V
V
A
A
A
C
C
o
C
TM

Related parts for FDP24N40

FDP24N40 Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP24N40 / FDPF24N40 Rev. A Description = 12A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to mini- ...

Page 2

... Starting ≤ 24A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP24N40 / FDPF24N40 Rev unless otherwise noted C Package Reel Size TO-220 - TO-220F - Test Conditions I = 250μ ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 5000 C iss = oss = rss = C gd 4000 C oss 3000 C iss 2000 1000 C rss 0 0 Drain-Source Voltage [V] DS FDP24N40 / FDPF24N40 Rev. A Figure 2. Transfer Characteristics *Notes: μ 1. 250 s Pulse Test 0 Figure 4. Body Diode Forward Voltage 200 100 V = 20V 10 ...

Page 4

... Figure 9. Maximum Safe Operating Area - FDP24N40 200 100 10 Operation in This Area is Limited by R DS(on) 1 0.1 0. Drain-Source Voltage [V] DS Figure 10. Transient Thermal Response Curve - FDP24N40 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.003 -5 10 FDP24N40 / FDPF24N40 Rev. A (Continued) Figure 8. On-Resistance Variation vs. ...

Page 5

... FDP24N40 / FDPF24N40 Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDP24N40 / FDPF24N40 Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDP24N40 / FDPF24N40 Rev 220 7 Dimensions in Millimeters www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions 10.16 MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 9.40 FDP24N40 / FDPF24N40 Rev. A TO-220F ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 ±0.20 8 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP24N40 / FDPF24N40 Rev. A FPS™ PDP-SPM™ ® FRFET Power220 SM Global Power Resource Power247 Green FPS™ POWEREDGE Green FPS™ e-Series™ ...

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