FDPF51N25 Fairchild Semiconductor, FDPF51N25 Datasheet

MOSFET N-CH 250V 51A TO-220F

FDPF51N25

Manufacturer Part Number
FDPF51N25
Description
MOSFET N-CH 250V 51A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF51N25

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
60 mOhm @ 25.5A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
51A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
3410pF @ 25V
Power - Max
38W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.06 Ohms
Forward Transconductance Gfs (max / Min)
43 S
Drain-source Breakdown Voltage
250 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
28 A
Power Dissipation
38 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FDPF51N25
Manufacturer:
IXYS
Quantity:
5 000
Price:
©2008 Fairchild Semiconductor Corporation
FDP51N25 / FDPF51N25 Rev. B
FDP51N25 / FDPF51N25
250V N-Channel MOSFET
Features
• 51A, 250V, R
• Low gate charge ( typical 55 nC)
• Low Crss ( typical 63 pF)
• Fast switching
• Improved dv/dt capability
Absolute Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
G
D
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
S
= 0.06Ω @V
TO-220
FDP Series
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
G
C
C
= 25°C)
= 100°C)
D
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FDPF Series
FDP51N25
FDP51N25
204
320
3.7
51
30
0.39
62.5
0.5
-55 to +150
± 30
1111
250
300
4.5
51
32
FDPF51N25
FDPF51N25
G
204*
51*
30*
0.3
38
62.5
3.3
--
S
UniFET
D
July 2008
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
°C/WJ
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDPF51N25 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2008 Fairchild Semiconductor Corporation FDP51N25 / FDPF51N25 Rev. B Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 51A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP51N25 / FDPF51N25 Rev. B Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250μ ...

Page 3

... V = 10V GS 0.08 0.06 0. Drain Current [A] D Figure 5. Capacitance Characteristics 6000 C oss 4000 C iss 2000 C rss Drain-Source Voltage [V] DS FDP51N25 / FDPF51N25 Rev. B Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 20V Note : T ...

Page 4

... V , Drain-Source Voltage [V] DS Figure 10. Maximum Drain Current vs. Case Temperature 100 T , Case Temperature [ C FDP51N25 / FDPF51N25 Rev. B (Continued) Figure 8. On-Resistance Variation vs. Temperature 3.0 2.5 2.0 1.5 1.0 * Notes : 0 250 μ 0.0 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area 10 μ ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP51N25 10 10 Figure 11-2. Transient Thermal Response Curve for FDPF51N25 FDP51N25 / FDPF51N25 Rev. B (Continued) D=0.5 -1 0.2 0.1 0.05 0.02 * Notes : -2 0.01 single pulse - Square W ave Pulse Duration [sec] 1 D=0.5 0 0.2 0.1 ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FDP51N25 / FDPF51N25 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP51N25 / FDPF51N25 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP51N25 / FDPF51N25 Rev. B TO-220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP51N25 / FDPF51N25 Rev. B (Continued) TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP51N25 / FDPF51N25 Rev. B FPS™ PDP SPM™ F-PFS™ Power-SPM™ ® FRFET PowerTrench SM Global Power Resource Programmable Active Droop™ ...

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