FDPF20N50 Fairchild Semiconductor, FDPF20N50 Datasheet

MOSFET N-CH 500V 20A TO-220F

FDPF20N50

Manufacturer Part Number
FDPF20N50
Description
MOSFET N-CH 500V 20A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF20N50

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
59.5nC @ 10V
Input Capacitance (ciss) @ Vds
3120pF @ 25V
Power - Max
38.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.23 Ohms
Forward Transconductance Gfs (max / Min)
24.6 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
38.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FDPF20N50
Manufacturer:
FCI
Quantity:
3 100
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FDPF20N50FT
Manufacturer:
IXYS
Quantity:
30 000
Price:
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
FDPF20N50T
Manufacturer:
FAIRCHILD
Quantity:
12 500
Price:
©2007 Fairchild Semiconductor Corporation
FDP20N50 / FDPF20N50 Rev. C
FDP20N50 / FDPF20N50
500V N-Channel MOSFET
Features
• 20A, 500V, R
• Low gate charge ( typical 45.6 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
Thermal Characteristics
* Drain current limited by maximum junction temperature
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
( typical 27 pF)
G
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink Typ.
Thermal Resistance, Junction-to-Ambient
D
S
= 0.23Ω @V
TO-220
FDP Series
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
C
C
= 25°C)
= 100°C)
G
D
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FDPF Series
FDP20N50
FDP20N50
12.9
250
2.0
62.5
20
80
0.5
0.5
-55 to +150
1110
500
±30
300
4.5
20
25
FDPF20N50
FDPF20N50
G
12.9 *
38.5
62.5
20 *
80 *
0.3
3.3
--
UniFET
S
April 2007
D
www.fairchildsemi.com
Unit
W/°C
Unit
°C/W
°C/W
°C/W
V/ns
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

Related parts for FDPF20N50

FDPF20N50 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink Typ. θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP20N50 / FDPF20N50 Rev. C Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 20A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP20N50 / FDPF20N50 Rev. C Package Reel Size TO-220 - TO-220F - T = 25°C unless otherwise noted C Conditions 250μ ...

Page 3

... I , Drain Current [A] D Figure 5. Capacitance Characteristics 6000 5000 C oss 4000 C iss 3000 2000 C 1000 rss Drain-Source Voltage [V] DS FDP20N50 / FDPF20N50 Rev. C Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage V = 10V 20V Note : ...

Page 4

... Limited by R DS(on Drain-Source Voltage [V] DS Figure 10. Maximum Drain Currentvs. Case Temperature Case Temperature [ C FDP20N50 / FDPF20N50 Rev. C (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 * Notes : 0 250 μ 0.0 50 100 150 200 -100 o C] Figure 9-2. Maximum Safe Operating Area 2 ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve - FDP20N50 Figure 11-2. Transient Thermal Response Curve - FDPF20N50 FDP20N50 / FDPF20N50 Rev. C (Continued θ θ θ θ www.fairchildsemi.com ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FDP20N50 / FDPF20N50 Rev. C Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP20N50 / FDPF20N50 Rev. C Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP20N50 / FDPF20N50 Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP20N50 / FDPF20N50 Rev. C TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP20N50 / FDPF20N50 Rev. C i-Lo™ Power-SPM™ ® PowerTrench ImpliedDisconnect™ IntelliMAX™ Programmable Active Droop™ ® ISOPLANAR™ QFET MICROCOUPLER™ ...

Related keywords