FDP20N50 Fairchild Semiconductor, FDP20N50 Datasheet - Page 4
![MOSFET N-CH 500V 20A TO-220](/photos/5/58/55862/fdp20n50_sml.jpg)
FDP20N50
Manufacturer Part Number
FDP20N50
Description
MOSFET N-CH 500V 20A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Specifications of FDP20N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
230 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
59.5nC @ 10V
Input Capacitance (ciss) @ Vds
3120pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N Channel
Continuous Drain Current Id
20A
Drain Source Voltage Vds
500V
On Resistance Rds(on)
230mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
5V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.23 Ohms
Forward Transconductance Gfs (max / Min)
24.6 S
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
250 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP20N50
Manufacturer:
FAIRCHILD
Quantity:
12 500
Company:
Part Number:
FDP20N50
Manufacturer:
Fairchi/ON
Quantity:
86 000
Company:
Part Number:
FDP20N50F
Manufacturer:
Fairchi/ON
Quantity:
17 387
Part Number:
FDP20N50F
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP20N50 / FDPF20N50 Rev. C
Typical Performance Characteristics
Figure 10. Maximum Drain Currentvs. Case Temperature
Figure 9-1. Maximum Safe Operating Area
Figure 7. Breakdown Voltage Variation
10
10
10
10
10
25
20
15
10
1.2
1.1
1.0
0.9
0.8
5
0
-1
-2
2
1
0
25
10
-100
0
- FDP20N50
-50
vs. Temperature
50
Operation in This Area
is Limited by R
T
V
J
T
, Junction Temperature [
DS
C
, Case Temperature [
0
, Drain-Source Voltage [V]
10
DS(on)
1
75
50
100
100
o
100 ms
C]
o
C]
* Notes :
DC
10 ms
10
* Notes :
1. T
2. T
3. Single Pulse
1. V
2. I
2
C
J
D
1 ms
GS
= 150
= 25
125
= 250
150
= 0 V
100
o
C
o
μ
C
A
μ
s
10
(Continued)
200
μ
s
150
4
10
10
10
10
10
-1
-2
2
1
0
10
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 9-2. Maximum Safe Operating Area
Figure 8. On-Resistance Variation
-100
0
Operation in This Area
is Limited by R
-50
V
- FDPF20N50
DS(on)
DS
T
vs. Temperature
, Drain-Source Voltage [V]
J
10
, Junction Temperature [
1
0
50
DC
100 ms
* Notes :
10 ms
1. T
2. T
3. Single Pulse
100
10
C
J
1 ms
= 150
= 25
2
o
C]
100
o
C
o
C
10
μ
* Notes :
s
1. V
2. I
150
μ
s
D
www.fairchildsemi.com
GS
= 10 A
= 10 V
200