FDP20N50F Fairchild Semiconductor, FDP20N50F Datasheet - Page 2
![MOSFET N-CH 500V 20A TO-220](/photos/5/58/55862/fdp20n50_sml.jpg)
FDP20N50F
Manufacturer Part Number
FDP20N50F
Description
MOSFET N-CH 500V 20A TO-220
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet
1.FDP20N50F.pdf
(10 pages)
Specifications of FDP20N50F
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
260 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
65nC @ 10V
Input Capacitance (ciss) @ Vds
3390pF @ 25V
Power - Max
250W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.26 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
20 A
Power Dissipation
250000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
FDP20N50F
Manufacturer:
Fairchi/ON
Quantity:
17 387
Part Number:
FDP20N50F
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
FDP20N50F / FDPF20N50FT Rev. A1
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 5mH, I
3. I
4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
Package Marking and Ordering Information
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
BV
∆BV
/
I
I
V
R
g
C
C
C
Q
Q
Q
t
t
t
t
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
FS
GS(th)
SD
DS(on)
iss
oss
rss
g(tot)
gs
gd
rr
SD
Device Marking
DSS
Symbol
FDPF20N50FT
∆T
≤ 20A, di/dt ≤ 200A/µs, V
DSS
FDP20N50F
J
AS
= 20A, V
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
DD
= 50V, R
DD
≤ BV
FDPF20N50FT
G
FDP20N50F
= 25Ω, Starting T
DSS
Device
, Starting T
Parameter
J
= 25°C
J
= 25°C
Package
TO-220F
TO-220
I
I
V
V
V
V
V
dI
V
V
V
V
f = 1MHz
V
V
V
R
D
D
DS
DS
GS
DD
GS
GS
GS
GS
DS
DS
DS
GS
G
F
= 250µA, V
= 250µA, Referenced to 25
/dt = 100A/µs
= 25Ω
= 500V, V
= 400V, T
= 0V, I
= ±30V, V
= 20V, I
= 25V, V
= 400V, I
= 250V, I
= 0V, I
= V
= 10V, I
= 10V
DS
T
Test Conditions
, I
C
SD
2
SD
D
Reel Size
D
= 25
D
GS
GS
D
D
= 10A
= 20A
= 20A
GS
C
= 10A
DS
= 250µA
= 20A
= 20A
= 125
= 0V
= 0V, T
o
-
-
= 0V
= 0V
C unless otherwise noted
o
C
J
= 25
(Note 4, 5)
(Note 4, 5)
o
(Note 4)
(Note 4)
o
C
C
Tape Width
-
-
Min.
500
3.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2550
Typ.
0.22
120
100
154
350
0.5
0.7
45
60
25
27
50
14
20
-
-
-
-
-
-
-
-
Quantity
www.fairchildsemi.com
Max.
±100
3390
0.26
100
250
210
130
100
465
1.5
5.0
10
40
65
20
80
50
50
-
-
-
-
-
-
-
Units
V/
nC
nC
nC
µA
pF
pF
pF
nA
ns
ns
ns
ns
ns
µC
V
Ω
A
A
V
V
S
o
C