FDPF15N65 Fairchild Semiconductor, FDPF15N65 Datasheet

MOSFET N-CH 650V 15A TO-220F

FDPF15N65

Manufacturer Part Number
FDPF15N65
Description
MOSFET N-CH 650V 15A TO-220F
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDPF15N65

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
440 mOhm @ 7.5A, 10V
Drain To Source Voltage (vdss)
650V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
63nC @ 10V
Input Capacitance (ciss) @ Vds
3095pF @ 25V
Power - Max
38.5W
Mounting Type
Through Hole
Package / Case
TO-220-3 Full Pack (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.44 Ohms
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
7 A
Power Dissipation
38.5 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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©2007 Fairchild Semiconductor Corporation
FDP15N65 / FDPF15N65 Rev. B
FDP15N65 / FDPF15N65
650V N-Channel MOSFET
Features
• 15A, 650V, R
• Low gate charge ( typical 48.5 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
Absolute Maximum Ratings
* Drain current limited by maximum junction termperature.
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
( typical 23.6 pF)
G
DS(on)
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
D
S
= 0.44Ω @V
TO-220
FDP Series
GS
= 10 V
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
Parameter
Parameter
C
= 25°C)
C
C
= 25°C)
= 100°C)
G
D
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TO-220F
FDPF Series
FDP15N65
FDP15N65
250
9.5
2.0
15
60
62.5
0.5
0.5
-55 to +150
± 30
25.0
650
637
300
4.5
15
FDPF15N65
G
FDPF15N65
38.5
9.5*
15*
60*
0.3
62.5
3.3
--
UniFET
S
D
April 2007
www.fairchildsemi.com
Unit
W/°C
V/ns
Unit
°C/W
°C/W
°C/W
mJ
mJ
°C
°C
W
V
A
A
A
V
A
TM

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FDPF15N65 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2007 Fairchild Semiconductor Corporation FDP15N65 / FDPF15N65 Rev. B Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 15A, di/dt ≤ 200A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDP15N65 / FDPF15N65 Rev. B Package Reel Size TO-220 -- TO-220F -- T = 25°C unless otherwise noted C Conditions 250μ ...

Page 3

... V = 10V GS 0.4 0.2 0 Drain Current [A] D Figure 5. Capacitance Characteristics 5000 C 4000 oss C iss 3000 2000 C 1000 rss Drain-Source Voltage [V] DS FDP15N65 / FDPF15N65 Rev. B Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 20V Note : 0 Figure 6. Gate Charge Characteristics ...

Page 4

... Figure 8. On-Resistance Variation 3.0 3.0 2.5 2.5 2.0 2.0 1.5 1.5 1.0 1.0 * Notes : 0 250 μ A 0.5 D 0.0 0.0 100 150 200 -100 -100 o C] Figure 9-2. Safe Operating Area for FDPF15N65 2 10 μ 100 μ 100 Notes : 150 Single Pulse ...

Page 5

... Typical Performance Characteristics Figure 11-1. Transient Thermal Response Curve for FDP15N65 Figure 11-2. Transient Thermal Response Curve for FDPF15N65 FDP15N65 / FDPF15N65 Rev. B (Continued tio tio θ θ θ θ www.fairchildsemi.com ...

Page 6

... Unclamped Inductive Switching Test Circuit & Waveforms FDP15N65 / FDPF15N65 Rev. B Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 6 www.fairchildsemi.com ...

Page 7

... FDP15N65 / FDPF15N65 Rev. B Peak Diode Recovery dv/dt Test Circuit & Waveforms 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FDP15N65 / FDPF15N65 Rev 220 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... Mechanical Dimensions MAX1.47 0.80 ±0.10 0.35 ±0.10 2.54TYP [2.54 ] ±0.20 FDP15N65 / FDPF15N65 Rev. B (Continued) TO-220F 10.16 ø3.18 ±0.20 ±0.10 (7.00) (1.00x45°) #1 2.54TYP [2.54 ] ±0.20 9.40 ±0.20 9 2.54 ±0.20 (0.70) +0.10 0.50 2.76 ±0.20 –0.05 Dimensions in Millimeters www.fairchildsemi.com ...

Page 10

... Definition of Terms Datasheet Identification Product Status Advance Information Formative or In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDP15N65 / FDPF15N65 Rev. B i-Lo™ Power-SPM™ ® ImpliedDisconnect™ PowerTrench IntelliMAX™ Programmable Active Droop™ ® ISOPLANAR™ QFET MICROCOUPLER™ ...

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