FQA90N15 Fairchild Semiconductor, FQA90N15 Datasheet

MOSFET N-CH 150V 90A TO-3P

FQA90N15

Manufacturer Part Number
FQA90N15
Description
MOSFET N-CH 150V 90A TO-3P
Manufacturer
Fairchild Semiconductor
Series
QFET™r
Datasheet

Specifications of FQA90N15

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
18 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
285nC @ 10V
Input Capacitance (ciss) @ Vds
8700pF @ 25V
Power - Max
375W
Mounting Type
Through Hole
Package / Case
TO-3PN-3
Transistor Polarity
N Channel
Continuous Drain Current Id
90A
Drain Source Voltage Vds
150V
On Resistance Rds(on)
18mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FQA90N15
Manufacturer:
FAIRCHILD
Quantity:
12 500
Part Number:
FQA90N15
Manufacturer:
FSC
Quantity:
86 755
Company:
Part Number:
FQA90N15
Quantity:
9 000
©2006 Fairchild Semiconductor Corporation
FQH90N15 / FQA90N15 Rev. C
FQH90N15 / FQA90N15
N-Channel Power MOSFET
Features
• 90A, 150V, R
• Low gate charge (typical 220 nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• 175°C maximum junction temperature rating
Absolute Maximum Ratings
Thermal Characteristics
V
I
I
V
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
J,
L
DSS
GSS
AS
AR
D
Symbol
Symbol
θJC
θCS
θJA
T
STG
rss
(typical 200 pF)
G
DS(on)
D
Drain-Source Voltage
Drain Current
Drain Current
Gate-Source voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
Operating and Storage Temperature Range
S
= 0.018Ω @V
TO-247
FQH Series
GS
- Continuous (T
- Continuous (T
- Pulsed
(T
- Derate above 25°C
= 10 V
Parameter
Parameter
C
= 25°C)
C
C
G
= 25°C)
= 100°C)
D
S
1
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for low
voltage applications such as audio amplifire, high efficiency
switching for DC/DC converters, and DC motor control,
uninterrupted power supply.
(Note 2)
(Note 1)
(Note 1)
(Note 3)
(Note 1)
FQA Series
FQH90N15/FQA90N15
TO-3PN
Min.
0.24
--
--
-55 to +175
1400
63.5
37.5
150
360
±25
375
300
6.0
2.5
90
90
Max.
0.4
40
--
G
!
!
QFET
October 2006
! "
! "
D
!
!
!
!
S
www.fairchildsemi.com
"
"
"
"
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Unit
W/°C
V/ns
Unit
mJ
mJ
°C/W
°C/W
°C/W
°C
°C
W
V
A
A
A
V
A
®

Related parts for FQA90N15

FQA90N15 Summary of contents

Page 1

... Thermal Resistance, Case-to-Sink θCS R Thermal Resistance, Junction-to-Ambient θJA ©2006 Fairchild Semiconductor Corporation FQH90N15 / FQA90N15 Rev. C Description = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 90A, di/dt ≤ 300A/μs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FQH90N15 / FQA90N15 Rev. C Package Reel Size TO-247 -- TO-3PN -- TO-3PN -- T = 25°C unless otherwise noted C Conditions ...

Page 3

... V 0.03 0. 100 150 I , Drain Current [A] D Figure 5. Capacitance Characteristics 18000 15000 12000 C iss C oss 9000 6000 C rss 3000 Drain-Source Voltage [V] DS FQH90N15 / FQA90N15 Rev. C Figure 2. Transfer Characteristics Notes : 1. 250 μ s Pulse Test Figure 4. Body Diode Forward Voltage 10V 20V GS 0 ...

Page 4

... 175 Single Pulse - Drain-Source Voltage [V] DS Figure 11. Transient Thermal Response Curve FQH90N15 / FQA90N15 Rev. C (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 Notes : 0 250 μ 0.0 -100 100 150 200 o C] Figure 10. Maximum Drain Current 100 80 10 μ s 100 μ ...

Page 5

... Unclamped Inductive Switching Test Circuit & Waveforms FQH90N15 / FQA90N15 Rev. C Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... Peak Diode Recovery dv/dt Test Circuit & Waveforms FQH90N15 / FQA90N15 Rev www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions TO-247AD (FKS PKG CODE 001) FQH90N15 / FQA90N15 Rev. C Dimensions in Millimeters 7 www.fairchildsemi.com ...

Page 8

... Mechanical Dimensions FQH90N15 / FQA90N15 Rev. C TO-3PN 8 Dimensions in Millimeters www.fairchildsemi.com ...

Page 9

... PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary No Identification Needed Obsolete FQH90N15 / FQA90N15 Rev. C OCX™ OCXPro™ ® OPTOLOGIC OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerEdge™ ...

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