FDL100N50F Fairchild Semiconductor, FDL100N50F Datasheet

MOSFET N-CH 500V 100A TO-264

FDL100N50F

Manufacturer Part Number
FDL100N50F
Description
MOSFET N-CH 500V 100A TO-264
Manufacturer
Fairchild Semiconductor
Series
UniFET™r
Datasheet

Specifications of FDL100N50F

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
55 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
238nC @ 10V
Input Capacitance (ciss) @ Vds
12000pF @ 25V
Power - Max
2500W
Mounting Type
Through Hole
Package / Case
TO-264
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.043 Ohms
Forward Transconductance Gfs (max / Min)
95 S
Drain-source Breakdown Voltage
500 V
Continuous Drain Current
100 A
Power Dissipation
2500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
FDL100N50F
Manufacturer:
FAIRCHILD
Quantity:
8 000
Part Number:
FDL100N50F
Manufacturer:
ON/安森美
Quantity:
20 000
©2009 Fairchild Semiconductor Corporation
FDL100N50F Rev. A
MOSFET Maximum Ratings
*Drain current limited by maximum junction temperature
Thermal Characteristics
V
V
I
I
E
I
E
dv/dt
P
T
T
R
R
R
D
DM
AR
FDL100N50F
N-Channel MOSFET,FRFET
500V, 100A, 0.055Ω
Features
• R
• Low gate charge ( Typ. 238nC)
• Low C
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability
• RoHS Compliant
J
L
DSS
GSS
AS
AR
D
θJC
θCS
θJA
, T
Symbol
Symbol
STG
DS(on)
rss
= 0.043Ω ( Typ.)@ V
( Typ. 64pF)
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Thermal Resistance, Junction to Case
Thermal Resistance, Case to Sink Typ.
Thermal Resistance, Junction to Ambient
G
D
GS
S
= 10V, I
D
T
= 50A
C
= 25
Parameter
Parameter
-Continuous (T
-Continuous (T
- Pulsed
(T
- Derate above 25
C
o
FDL Series
C unless otherwise noted
= 25
TO-264
o
C)
C
C
= 25
= 100
1
o
C
o
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advanced technology has been especially tailored to
minimize on-state resistance, provide superior
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switched mode power supplies and active power factor
correction.
C)
o
C)
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
G
Min.
0.1
-
-
FDL100N50F
S
D
-55 to +150
5000
2500
73.5
500
±30
100
400
300
100
60
20
20
Max.
0.05
30
-
UniFET
www.fairchildsemi.com
May 2009
switching
Units
W/
Units
o
V/ns
mJ
mJ
o
o
C/W
W
V
V
A
A
A
C
C
o
C
TM

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FDL100N50F Summary of contents

Page 1

... R Thermal Resistance, Case to Sink Typ. θCS R Thermal Resistance, Junction to Ambient θJA ©2009 Fairchild Semiconductor Corporation FDL100N50F Rev. A Description = 50A These N-Channel enhancement mode power field effect D transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to ...

Page 2

... Starting ≤ 100A, di/dt ≤ 200A/µs, V ≤ Starting DSS 4. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ Essentially Independent of Operating Temperature Typical Characteristics FDL100N50F Rev. A Package Reel Size TO-264 - unless otherwise noted C Test Conditions I = 250µA, V ...

Page 3

... Drain Current [A] D Figure 5. Capacitance Characteristics 30000 C iss = oss = 25000 C rss = oss 20000 15000 C iss 10000 C rss 5000 Drain-Source Voltage [V] DS FDL100N50F Rev. A Figure 2. Transfer Characteristics 400 100 *Notes: 1. 250 µ s Pulse Test Figure 4. Body Diode Forward Voltage 300 100 V = 20V GS o *Note ...

Page 4

... 150 J 3. Single Pulse 0. Drain-Source Voltage [V] DS 0.1 0.5 0.01 0.2 0.1 0.05 0.02 0.001 0.01 Single pulse 0.0001 -5 10 FDL100N50F Rev. A (Continued) Figure 8. On-Resistance Variation 3.0 2.5 2.0 1.5 1.0 *Notes: 0 1mA D 0.0 100 150 200 -100 Figure 10. Maximum Drain Current ...

Page 5

... FDL100N50F Rev. A Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms 5 www.fairchildsemi.com ...

Page 6

... FDL100N50F Rev. A Peak Diode Recovery dv/dt Test Circuit & Waveforms + + • • • I • www.fairchildsemi.com ...

Page 7

... Mechanical Dimensions FDL100N50F Rev. A Dimensions in Millimeters 7 www.fairchildsemi.com ...

Page 8

... Definition of Terms Datasheet Identification Product Status Advance Information Formative / In Design Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDL100N50F Rev. A F-PFS™ PowerTrench ® FRFET PowerXS™ SM Global Power Resource Programmable Active Droop™ ® Green FPS™ QFET Green FPS™ ...

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