STP12NK60Z STMicroelectronics, STP12NK60Z Datasheet

MOSFET N-CH 600V 10A TO220

STP12NK60Z

Manufacturer Part Number
STP12NK60Z
Description
MOSFET N-CH 600V 10A TO220
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STP12NK60Z

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
640 mOhm @ 5A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4.5V @ 100µA
Gate Charge (qg) @ Vgs
59nC @ 10V
Input Capacitance (ciss) @ Vds
1740pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.53 Ohms
Forward Transconductance Gfs (max / Min)
9 S
Drain-source Breakdown Voltage
650 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
150 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
5A
Drain Source Voltage Vds
600V
On Resistance Rds(on)
530mohm
Rds(on) Test Voltage Vgs
30V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4817-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STP12NK60Z
Manufacturer:
STMicroelectronics
Quantity:
1 850
Part Number:
STP12NK60Z
Manufacturer:
ST
Quantity:
12 500
Part Number:
STP12NK60Z
Manufacturer:
ST
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STP12NK60Z
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Quantity:
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Part Number:
STP12NK60ZFP
Manufacturer:
ST
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Part Number:
STP12NK60ZFP
Manufacturer:
ST
Quantity:
20 000
Part Number:
STP12NK60Z������
Manufacturer:
ST
0
N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247
Features
Application
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down,
specialties is taken to ensure a very good dv/dt
capability for the most demanding application.
Such series complements ST full range of high
voltage Power MOSFETs.
Table 1.
October 2009
STW12NK60Z
STP12NK60Z
STF12NK60Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatability
Switching applications
Type
STW12NK60Z
STP12NK60Z
STF12NK60Z
Order codes
Device summary
(@Tjmax)
650 V
650 V
650 V
V
DSS
<0.640 Ω 10 A 150 W
<0.640 Ω 10 A
<0.640 Ω 10 A 150 W
R
max
DS(on)
Zener-protected SuperMESH™ Power MOSFET
W12NK60Z
P12NK60Z
F12NK60Z
Marking
I
D
Doc ID 11324 Rev 7
35 W
P
W
STF12NK60Z, STW12NK60Z
Figure 1.
TO-220FP
TO-220FP
Package
TO-220
TO-247
G(1)
Internal schematic diagram
1
2
3
STP12NK60Z
TO-247
D(2)
S(3)
1
Packaging
2
3
Tube
Tube
Tube
TO-220
www.st.com
AM01476v1
1
2
1/15
3
15

Related parts for STP12NK60Z

STP12NK60Z Summary of contents

Page 1

... Table 1. Device summary Order codes STP12NK60Z STF12NK60Z STW12NK60Z October 2009 STF12NK60Z, STW12NK60Z TO-220FP Figure 1. Marking Package P12NK60Z TO-220 F12NK60Z TO-220FP W12NK60Z TO-247 Doc ID 11324 Rev 7 STP12NK60Z TO-220 TO-247 Internal schematic diagram D(2) G(1) S(3) Packaging Tube Tube Tube AM01476v1 1/15 www.st.com 15 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 STP12NK60Z, STF12NK60Z, STW12NK60Z . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Doc ID 11324 Rev ...

Page 3

... STP12NK60Z, STF12NK60Z, STW12NK60Z 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) I Drain current (pulsed Total dissipation at T TOT Derating factor V Gate source ESD (HBM-C=100 pF, R=1.5 kΩ) ESD(G-S) (3) dv/dt Peak diode recovery voltage slope ...

Page 4

... Q Gate-source charge gs Q Gate-drain charge gd 1. Pulsed: pulse duration = 300 µs, duty cycle 1. defined as a constant equivalent capacitance giving the same charging time as C oss eq. increases from 0 to 80% V 4/15 STP12NK60Z, STF12NK60Z, STW12NK60Z Parameter Test conditions mA Max rating Max rating ...

Page 5

... STP12NK60Z, STF12NK60Z, STW12NK60Z Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1 ...

Page 6

... D ( Tj=150°C Tc=25°C Sinlge pulse 0.1 0 Figure 6. Safe operating area for TO-220FP 6/15 STP12NK60Z, STF12NK60Z, STW12NK60Z Figure 3. Figure 5. 10µs 100µs 1ms 10ms 100 V (V) DS Figure 7. Doc ID 11324 Rev 7 Thermal impedance for TO-220 Thermal impedance for TO-247 Thermal impedance for TO-220FP ...

Page 7

... STP12NK60Z, STF12NK60Z, STW12NK60Z Figure 8. Output characteristics Figure 10. Transconductance Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations Figure 9. Transfer characteristics Figure 11. Static drain-source on resistance Doc ID 11324 Rev 7 Electrical characteristics 7/15 ...

Page 8

... Figure 16. Source-drain diode forward characteristics Figure 18. Maximum avalanche energy vs temperature E AS (mJ 260 V DD 240 220 200 180 160 140 120 100 8/15 STP12NK60Z, STF12NK60Z, STW12NK60Z Figure 15. Normalized on resistance vs Figure 17. Normalized breakdown voltage vs HV27640 =10 A =50 V 100 120 140 T (°C) J Doc ID 11324 Rev 7 temperature temperature ...

Page 9

... STP12NK60Z, STF12NK60Z, STW12NK60Z 3 Test circuits Figure 19. Switching times test circuit for resistive load D.U. Figure 21. Test circuit for inductive load switching and diode recovery times FAST L=100µH G D.U.T. DIODE Ω Figure 23. Unclamped inductive waveform Figure 20. Gate charge test circuit 3.3 2200 µ ...

Page 10

... Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. 10/15 STP12NK60Z, STF12NK60Z, STW12NK60Z Doc ID 11324 Rev 7 ® ...

Page 11

... STP12NK60Z, STF12NK60Z, STW12NK60Z TO-220 type A mechanical data Dim Min A 4.40 b 0.61 b1 1.14 c 0.48 D 15. 2.40 e1 4.95 F 1.23 H1 6. 3.50 L20 L30 ∅P 3.75 Q 2.65 Doc ID 11324 Rev 7 Package mechanical data mm Typ Max 4.60 0.88 1.70 0.70 15.75 1.27 10.40 2.70 5 ...

Page 12

... Package mechanical data Dim 12/15 STP12NK60Z, STF12NK60Z, STW12NK60Z TO-220FP mechanical data Dia Doc ID 11324 Rev 7012510_Rev_J G ...

Page 13

... STP12NK60Z, STF12NK60Z, STW12NK60Z Dim øP øR S TO-247 mechanical data mm. Min. Typ. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 Doc ID 11324 Rev 7 Package mechanical data Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14 ...

Page 14

... Revision history 5 Revision history Table 9. Document revision history Date 12-Apr-2004 06-Sep-2005 13-Sep-2005 05-Sep-2006 26-Apr-2007 25-Jan-2008 13-Oct-2009 14/15 STP12NK60Z, STF12NK60Z, STW12NK60Z Revision 1 First release 2 Inserted ecopack indication 3 Final version 4 The document has been reformatted 5 The document has been updated on 6 Modified: dv/dt value on ...

Page 15

... STP12NK60Z, STF12NK60Z, STW12NK60Z Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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