STP12NK60Z STMicroelectronics, STP12NK60Z Datasheet - Page 3

• Manufacturer Part Number: STP12NK60Z
• Description: MOSFET N-CH 600V 10A TO220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP12NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 640 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohms
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 530mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4817-5

STP12NK60Z, STF12NK60Z, STW12NK60Z
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
V
Symbol
R
Symbol
dv/dt
R
ESD(G-S)
I
Symbol
DM
P
thj-case
V
thj-amb
V
V
T
SD
I
I
TOT
T
T
ISO
GS
DS
stg
E
D
D
I
l
j
AS
(2)
AS
(3)
≤ 10 A, di/dt ≤ 200 A/µs, V
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Gate source ESD (HBM-C=100 pF, R=1.5 kΩ)
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t =1 s;T
Storage temperature
Max operating junction temperature
Absolute maximum ratings
Thermal data
Avalanche characteristics
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj Max)
Single pulse avalanche energy
(starting Tj=25°C, I
Parameter
Parameter
DD
Parameter
C
Doc ID 11324 Rev 7
D
= 480 V
= 25 °C
=I
GS
AS
= 0)
, V
DD
C
C
= 25 °C
= 100 °C
=50 V)
C
= 25 °C)
TO-220 TO-247 TO-220FP
TO-220, TO-247 TO-220FP
62.5
0.83
150
6.3
1.2
10
40
-55 to 150
Value
Value
Value
50
600
±30
150
260
300
4.5
10
Electrical ratings
6.3
10
40
2500
2500
0.27
62.5
35
3.6
(1)
(1)
(1)
W/°C
°C/W
°C/W
V/ns
Unit
Unit
Unit
mJ
°C
°C
W
°C
A
V
V
A
A
A
V
V
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