STP12NK60Z STMicroelectronics, STP12NK60Z Datasheet - Page 8

• Manufacturer Part Number: STP12NK60Z
• Description: MOSFET N-CH 600V 10A TO220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP12NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 640 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohms
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 530mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4817-5

Electrical characteristics
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Figure 14. Normalized gate threshold voltage
Figure 16. Source-drain diode forward
Figure 18. Maximum avalanche energy vs
(mJ)
E
160
140
180
120
100
260
240
220
200
AS
60
40
20
80
0
0
vs temperature
characteristics
temperature
20
40
60
V
I
DD
D
80
=10 A
=50 V
100
120 140
HV27640
Doc ID 11324 Rev 7
T
J
(°C)
Figure 15. Normalized on resistance vs
Figure 17. Normalized breakdown voltage vs
STP12NK60Z, STF12NK60Z, STW12NK60Z
temperature
temperature