STP12NK60Z STMicroelectronics, STP12NK60Z Datasheet - Page 7

• Manufacturer Part Number: STP12NK60Z
• Description: MOSFET N-CH 600V 10A TO220
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STP12NK60Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 640 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 59nC @ 10V
• Input Capacitance (ciss) @ Vds: 1740pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.53 Ohms
• Forward Transconductance Gfs (max / Min): 9 S
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 150 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 530mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4817-5

STP12NK60Z, STF12NK60Z, STW12NK60Z
Figure 8.
Figure 10. Transconductance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
Output characteristics
Doc ID 11324 Rev 7
Figure 9.
Figure 11. Static drain-source on resistance
Transfer characteristics
Electrical characteristics
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